Samsung Electronics Co., Ltd.

Eui-chul Jeong

Sung-Hee Lee

Seung-Hwan Kim

Dong-Soo Woo

Sua Kim

Dae-Sin Kim

Na-Ra Kim

Dae-Sun Kim

A memory device comprises: a memory cell array comprising first and second word lines located adjacent to each other, a first memory cell connected to the first word line, and a second memory cell connected to the second word line and located adjacent to the first memory cell; and a word line voltage supplying unit that transitions a word line voltage of the first word line from a first word line voltage to a second word line voltage, in response to a first control signal. A transition control unit generates the first control signal for controlling a pulse of the word line voltage of the first word line in a transition period from the first word line voltage to the second word line voltage in such a way that a transition waveform profile from the first word line voltage to the second word line voltage is different from a transition waveform profile from the second word line voltage to the first word line voltage.

Memory device, memory system, and operation method thereof

Growing community of inventors

Yongin-si, South Korea

Eui-chul Jeong