Samsung Electronics Co., Ltd.

Eui-Chul Hwang

Ju-Youn Kim

Sung-Hun Lee

Seong-Ho Cho

Dong-Soo Lee

David Seo

Byung-Sung Kim

Bong-Seok Suh

Mohammad Rakib Uddin

Ji-Hyun Hur

Sang-Min Yoo

Hyung-Joo Na

Sung-Moon Lee

Joo-Ho Jung

Myoung-Jae Lee

Moon-Seung Yang

A semiconductor device may include active fins each of which extends in a first direction on a substrate, the active fins being spaced apart from each other in a second direction different from the first direction, a conductive structure extending in the second direction on the substrate, the conductive structure contacting the active fins, a first diffusion break pattern between the substrate and the conductive structure, the first diffusion break pattern dividing a first active fin of the active fins into a plurality of pieces aligned in the first direction, and a second diffusion break pattern adjacent to the conductive structure on the substrate, the second diffusion break pattern having an upper surface higher than a lower surface of the conductive structure, and dividing a second active fin of the active fins into a plurality of pieces aligned in the first direction.

Semiconductor devices

Growing community of inventors

Seoul, South Korea

Eui-Chul Hwang