Samsung Electronics Co., Ltd.

Eui-chul Hwang

Sang-moon Lee

Young-Jin Cho

Ki-ha Hong

Kyoung-yeon Kim

Sung-Hun Lee

Myoung-jae Lee

Dong-Soo Lee

David Seo

Seong-ho Cho

Ji-hyun Hur

Moon-seung Yang

Mohammad Rakib Uddin

The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.

Semiconductor device and method of fabricating the same

A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

Method of manufacturing a semiconductor device including a gate electrode on a protruding group III-V material layer

Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor device

Semiconductor device including a gate electrode on a protruding group III-V material layer

A semiconductor device is provided that includes a diffusion barrier layer between a compound semiconductor layer and a dielectric layer, as well as a method of fabricating the semiconductor device, such that the semiconductor device includes a compound semiconductor layer; a dielectric layer; and a diffusion barrier layer including an oxynitride formed between the compound semiconductor layer and the dielectric layer.

Growing community of inventors

Seongnam-si, South Korea

Eui-chul Hwang