Lam Research Corporation

Valstybinis Moksliniu Tyrimu Institutas Fiziniu Ir Technologijos Mokslu Centras

Eugenijus Norkus

Aldona Jagminiene

Ina Stankeviciene

Yezdi N Dordi

Algirdas Vaskelis

Jane Jaciauskiene

Aniruddha Joi

Loreta Tamasauskaite-Tamasiunaite

Gediminas Raciukaitis

Karolis Ratautas

Albina Zieliene

William Thie

Zita Sukackiene

This invention describes a process for selectively depositing metal on the surfaces of inorganic dielectric materials such as glass, ceramics, or semiconductor materials. The method enables the rapid and precise formation of electric circuits on both flat and three-dimensional surfaces. The production method includes steps: firstly, treatment of an item surface with an ultrashort pulse laser of the areas for metallisation, seconds step pre-treatment with the R—OH solution followed by metal salt catalyst activation in a bath and finally electroless metal plating. During immersion in the metal salt catalyst activation bath, localized R—OH molecules on the item's surface act as reducing agents, facilitating the reduction of metal ions from the activation bath. This results in the formation of catalytic seeds exclusively at the laser-modified areas. The metal layers exhibit high adhesion to the dielectric surface due to the formation of chemical bonds.

Method for selective metallisation of inorganic dielectrics or semiconductors

The present invention relates to a production of electro-conductive traces on the surface of polymeric articles using laser excitation for the areas to be metallised, followed by activation of the laser-treated areas with a metal salt solution, the article is later rinsed in distilled water, and the activated areas are metallised in the chemical plating bath. The aims of the invention are to produce cost-effective conductive traces of the circuits for the application in 3D moulded interconnect devices, to increase the quality of the circuit traces improving the selective metallization process. An irradiation dose and scanning parameters for the surface excitation are chosen experimentally, provided that a negative static charge appears on the surface of the laser-irradiated areas. The chosen parameters ensure that any surface degradation of the polymer is avoided. The activation solution used in the method is aqueous solution consisting of one chosen salt comprising: silver (Ag), copper (Cu), nickel (Ni), cobalt (Co), zinc (Zn), chrome (Cr), tin (Sn) salt.

Method for formation of electro-conductive traces on polymeric article surface

A solution for electroless deposition of platinum is provided. The solution comprises Coions, Ptions, and amine ligands. A ratio of Coto Ption is between 100:1 and 2:1. The solution allows for electroless deposition of platinum without requiring high temperatures and high pH. The solution allows for the deposition of a pure platinum layer.

[object Object]

A method for providing an electroless plating of a platinum containing layer is provided. A Tistabilization solution is provided. A Ptstabilization solution is provided. A flow from the Tistabilization solution is combined with a flow from the Ptstabilization solution and water to provide a diluted mixture of the Tistabilization solution and the Ptstabilization solution. A substrate is exposed to the diluted mixture of the Tistabilization solution and the Ptstabilization solution.

Electroless deposition of continuous platinum layer

A solution for electroless deposition of cobalt is provided. A reducing agent of Tiions is provided to the solution. Coions are provided to the solution.

A non-aqueous electroless copper plating solution that includes an anhydrous copper salt component, an anhydrous cobalt salt component, a non-aqueous complexing agent, and a non-aqueous solvent is provided.

Electroless deposition from non-aqueous solutions

Systems and methods for electroless deposition of a cobalt-alloy layer on a copper surface include a solution characterized by a low pH. This solution may include, for example, a cobalt(II) salt, a complexing agent including at least two amine groups, a pH adjuster configured to adjust the pH to below 7.0, and a reducing agent. In some embodiments, the cobalt-alloy is configured to facilitate bonding and copper diffusion characteristics between the copper surface and a dielectric in an integrated circuit.

Electroless deposition of cobalt alloys

An electroless ruthenium plating solution is disclosed herein. The solution includes a ruthenium source, a polyamino polycarboxylic acid complexing agent, a reducing agent, a stabilizing agent, and a pH-modifying substance. A method of preparing an electroless ruthenium plating solution is also provided.

Plating solutions for electroless deposition of ruthenium

An electroless copper plating solution is disclosed herein. The solution includes an aqueous copper salt component, an aqueous cobalt salt component, a triamine based complexing agent, and an acidic pH-modifying substance in an amount sufficient to make the electroless copper plating solution acidic. A method of preparing an electroless copper solution is also provided.

Plating solution for electroless deposition of copper

An electroless copper plating solution is disclosed herein. The solution includes an aqueous copper salt component, an aqueous cobalt salt component, a polyamine-based complexing agent, a chemical brightener component, a halide component, and a pH-modifying substance in an amount sufficient to make the electroless copper plating solution acidic. A method of preparing an electroless copper solution is also provided.

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Vilnius, Lithuania

Eugenijus Norkus