Lam Research Corporation

International Business Machines Corporation

Eugene Yuexing Zhao

Cangshan Xu

Fen Dai

Alan John Jensen

Jeffrey J Farber

Peter Renteln

Mario Stella

Son Van Nguyen

Richard Hsiao

Travis R Taylor

Herbert Elliot Litvak

Thao Pham

Kang Jia

Michael David Steiman

Kevin T Crofton

Christian David Frederickson

As one of many embodiments of the present invention, a seamless polishing apparatus for utilization in chemical mechanical polishing is provided. The seamless polishing apparatus includes a polishing pad where the polishing pad is shaped like a belt and has no seams. The seamless polishing apparatus also includes a base belt where the base belt includes a reinforcement layer where the reinforcement layer is a fibrous-type material. In addition, the polishing pad is located over the base belt.

Methods for making reinforced wafer polishing pads and apparatuses implementing the same

A method and apparatus for pre-conditioning a polishing pad for use in chemical mechanical planarization of semiconductor wafers is described. The apparatus includes a pre-conditioning member having a smooth surface. The method includes providing a pre-conditioning member having a smooth surface, pressing the pre-conditioning member against the polishing pad while moving the polishing pad, and flattening the surface of the polishing pad until a polishing pad flatness is achieved that may be used to achieve a desired semiconductor wafer planarity.

Method and apparatus for controlling CMP pad surface finish

The method for controlling the depth of polishing during a CMP process involves the deposition of a polishing stop layer at an appropriate point in the device fabrication process. The stop layer is comprised of a substance that is substantially more resistant to polishing with a particular polishing slurry that is utilized in the CMP process than a polishable material layer. Preferred stop layer materials of the present invention are tantalum and diamond-like carbon (DLC), and the polishable layer may consist of alumina. In one embodiment of the present invention the stop layer is deposited directly onto the top surface of components to be protected during the CMP process. A polishable layer is thereafter deposited upon the stop layer, and the CMP polishing step removes the polishable material layer down to the portions of the stop layer that are deposited upon the top surfaces of the components. The stop layer is thereafter removed from the top surface of the components. In this embodiment, the fabricated height of the components is preserved.

Chemical mechanical polishing thickness control in magnetic head fabrication

An apparatus for improving performance of a wafer polishing apparatus is described. The apparatus includes a platen in a support assembly having a plurality of fluid channels and at least one region of altered topography positioned on a portion of the platen surface.

Platen assembly having a topographically altered platen surface

An optical window structure is disclosed. The optical window structure includes a support layer that has a reinforcement layer and a cushioning layer. In addition, the optical windows structure has a polishing pad which is attached to a top surface of the support layer. Furthermore, the optical window structure has an optical window opening and a shaped optical window. The shaped optical window at least partially protrudes into the optical window opening in the support layer and the polishing pad during operation.

Apparatus for accurate endpoint detection in supported polishing pads

A seamless polishing apparatus for utilization in chemical mechanical polishing is disclosed. The seamless polishing apparatus includes a base belt that has a reinforcement layer and a cushioning layer. The seamless polishing apparatus also includes a polishing pad that is attached to the base belt as a result of a direct casting of a polymeric precursor on a top surface of the cushioning layer. In addition, the cushioning layer is an intermediary layer between the polishing belt pad and the base belt.

Methods for making reinforced wafer polishing pads utilizing direct casting and apparatuses implementing the same

As one of many embodiments of the present invention, a seamless polishing apparatus for utilization in chemical mechanical polishing is provided. The seamless polishing apparatus includes a polishing pad where the polishing pad is shaped like a belt and has no seams. The seamless polishing apparatus also includes a base belt where the base belt includes a reinforcement layer and a cushioning layer. In addition, the cushioning layer is an intermediary layer between the polishing belt pad and the base belt.

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San Jose, CA, United States of America

Eugene Yuexing Zhao