Tosoh Smd, Inc.

Adma Products, Inc.

Other

Toso Smd, Inc.

Eugene Y Ivanov

David B Smathers

Erich Theado

Vladimir S Moxson

Harry W Conard

Yongwen Yuan

Weifang Miao

Vladimir V Boldyrev

Tatyana F Grigoriva

Charles E Wickersham, Jr

John E Poole

Phil Frausto

Yang Liu

Robert S Bailey

Lin Zhu

Jeff Hart

Alex Kuhn

Eduardo Del Rio

Christopher M Jaworski

Matthew Fisher

Ronald G Jordan

A sintered compact magnesium oxide target for sputtering having a purity of 99.99 wt % or higher, a density of 3.58 g/cmor higher, and a transparency 10% or more. A sintered compact magnesium oxide target for sputtering having a purity of 99.99 wt % or higher, a density of 3.58 g/cmor higher, and an average crystal grain size of 50 μm or more.

Magnesium oxide sputtering target and method of making same

A sputter target assembly comprising a Si target and a backing plate is provided wherein the backing plate is bonded to the target. The Si target comprises a smooth, mirror-like surface and has a surface roughness of less than about 15.0 Angstroms. Methods are provided for producing silicon target/backing plate assemblies wherein a silicon blank is processed to remove scratches from the blank surface resulting in a mirror like surface on the target, and a surface roughness of 15.0 Angstroms or less. The method comprises a first and second cleaning step with the first step being performed before the scratch removal step, and the second step being performed after the scratch removal.

Silicon sputtering target with special surface treatment and good particle performance and methods of making the same

A method of making a metal or metal alloy target having the steps of providing a billet, the billet having a generally cylindrical configuration and having a central axis, cutting the billet in half parallel to the central axis to form at least a half cylindrical blank, and cross rolling the half cylindrical blank to form a target.

Method of production of uniform metal plates and sputtering targets made thereby

Methods for making Ta sputter targets and sputter targets made thereby. Ta ingots are compressed along at least two of the x, y, and z dimensions and then cross rolled in at least one of those dimensions. A pair of target blanks is then cut from the cross rolled ingot. The resulting targets have a predominate mix of {100} and {111} textures and have reduced B {100} and B {111} banding factors.

Method of making a tantalum sputter target and sputter targets made thereby

Described is a design and method for producing a sputtering target assembly with low deflection made from target material solder bonded to composite backing plate with coefficient of thermal expansion (CTE) matching the target material. The composite backing plate is composite configuration composed of at least two different materials with different CTE. The composite backing plate, after plastic deformation, if necessary, has a CTE matching the target material and low and desirable deflection in the bonding process, and therefore, resulting in a low deflection and low stress target material bonded to composite backing plate assembly. The method includes manufacturing composite backing plate with a flat bond surface, heat treating of target blank and composite backing plate to achieve desirable shape of bond surfaces, solder bonding target to a backing plate, and slowly cooling the assembly to room temperature. Matching CTE in both target material and backing plate eliminates the problem of CTE mismatch and prevents the assembly from deflection and internal stress.

Low deflection sputtering target assembly and methods of making same

A method of making a diffusion bonded sputter target assembly is provided. A target blank comprising a first metal or alloy has a first surface defining a sputtering surface and a second surface. A second metal or alloy is placed around the target blank. A backing plate is provided adjacent the second metal or alloy that is positioned alongside of the second target surface. This assembly is then diffusion bonded, and a portion of the second metal overlying the sputtering surface of the target is removed to expose the target sputtering surface. W target or W alloy target/Ti or Ti alloy backing plate assemblies are provided with an Al interlayer positioned intermediate the W or W alloy target and backing plate. The assembly has a bond strength exceeding 50 MPa.

Diffusion-bonded sputter target assembly and method of manufacturing

A sputtering target made of aluminum and one or more alloying elements including Ni, Co, Ti, V, Cr, Mn, Mo, Nb, Ta, W, and rare earth metals (REM). The addition of very small amounts of alloying element to pure aluminum and aluminum alloy target improves the uniformity of the deposited wiring films through affecting the target's recrystallization process. The range of alloying element content is 0.01 to 100 ppm by weight, which is sufficient to prevent dynamic recrystallization of pure aluminum and aluminum alloys, such as 30 ppm Si alloy. The addition of small amount of alloying elements increases the thermal stability and electromigration resistance of pure aluminum and aluminum alloys thin films while sustaining their low electrical resistivity and good etchability. This invention also provides a method of manufacturing microalloyed aluminum and aluminum alloy sputtering target.

Sputtering target

A method for producing a high purity tungsten sputtering target. The method includes heat treating of high purity tungsten powder in order to consolidate it into a blank with density providing closed porosity. The consolidation may be achieved by hot pressing, HIP or any other appropriate method. Next, this plate is rolled to produce target blanks of approximate size and further increased density of the material. The method may be applicable to a variety of blanks including round shape target blanks, for example, consisting of tungsten, molybdenum, tantalum, hafnium, etc.

High purity target manufacturing methods

A method of making metal target blank using circular groove pressing includes pressing a metal or metal alloy target blank in a first circular grooved pressing die set into a first concentric corrugated shape while maintaining an original diameter of the target blank to create concentric rings of shear deformation in the target blank. Forces are then applied to the concentric corrugated target blank sufficient to substantially flatten the target blank with a flat die set while maintaining the original diameter of the target blank to restore the target blank to a substantially flat condition. The target blank is pressed in a second circular grooved die set into a second concentric corrugated shape while maintaining the original diameter of the target blank, wherein the second die set has a groove pattern offset from a groove pattern of the first die set so as to create concentric rings of shear deformation in areas of the target blank which were not previously deformed. Forces are again applied to the concentric corrugated target blank sufficient to substantially flatten the target blank with a flat die set while maintaining the original diameter of the target blank to restore the target blank to a substantially flat condition.

Circular groove pressing mechanism and method for sputtering target manufacturing

A method for producing a sputtering target assembly bonded to a backing plate. The method includes bonding a target to a high strength backing plate and further creating a vacuum seal between the target and the backing plate using friction stir welding processes.

Sputtering target assembly and method of making same

A method for producing a sputtering target assembly bonded to a backing plate. The method includes bonding a target () to a high strength backing plate () and further creating a vacuum seal between the target and the backing plate using friction stir welding processes.

A sputtering plasma reactors for plasma vapor deposition (PVD) having an improved interface between a PVD target, a ceramic ring and a PVD chamber wall. The reactor includes a PVD chamber wall and a PVD target, wherein the target in conjunction with the PVD chamber wall form a vacuum chamber and wherein at least the portion of the target facing the vacuum chamber is composed of material to be sputtered. The reactor also includes an insulating ceramic ring positioned between the target and the PVD chamber wall. A first O-ring is provided to establish a vacuum seal between the target and the insulating ring and a second O-ring is provided to establish a vacuum seal between the insulating ring and the PVD chamber wall. At least one spacer is positioned between the target and insulating ring to maintain a gap G between the insulating ring and the target. The spacer is made of a suitable low coefficient of friction material and inhibits black marking, scratching or the like that may otherwise occur along the interface between the ceramic ring and the target.

Sputtering target with an insulating ring and a gap between the ring and the target

The method is suitable for the manufacture of flat or shaped titanium aluminide articles and layered metal matrix composites such as lightweight plates and sheets for aircraft and automotive applications, thin cross-section vanes and blades, composite electrodes, heat-sinking lightweight electronic substrates, bulletproof structures for vests, partition walls and doors, as well as for sporting goods such as helmets, golf clubs, sole plates, crown plates, etc. The method includes the following steps: (a) forming a porous preform of the reactive powder alloy or a porous multi-layer composite preform consisting of reactive powder metals and alloys by consolidation using at least one method selected from low-temperature loose sintering in vacuum, high-temperature loose sintering in vacuum, low-pressure sintering in an inert gas, cold pressing, direct powder rolling, isostatic or die pressing, and other means of room temperature and warm temperature consolidation, and/or combination thereof, to provide the density not less than 25% from the theoretical density of said reactive alloy; (b) hot consolidating by hot pressing said preform, hot rolling, hot isostatic pressing, or hot extrusion to obtain the density of 98-100% from the theoretical density of said reactive alloy; (c) additional sintering and/or annealing at the temperature being at least 900&#xb0; C. to decrease the residual porosity, control the microstructure, and improve the mechanical properties, especially ductility and/or plasticity of the resulting metal sheets or layered composites. The hot pressing is carried out at the temperature ranging 950-1700&#xb0; C., preferably at 1250-1450&#xb0; C., and at pressure ranging 50-350 kg/cm. The HIP is carried out at the temperature ranging 1250-1350&#xb0; C. and at pressure ranging 15000-40000 psi. The layered composite preform is manufactured by individual loose sintering, one layer of the composite at a time, and assembling them in the desired order. The composite consists of layers of titanium and/or titanium hydride, Ti-6Al-4V alloy, &#x3b1;-titanium aluminide alloy, &#x3b2;-titanium aluminide alloy, and &#x3b3;-titanium aluminide alloy in any combinations.

Method for manufacturing fully dense metal sheets and layered composites from reactive alloy powders

A sputtering target and a backing plate are diffusion-bonded with or without an insert or inserts interposed there-between so as to have a solid phase diffusion-bonded interface. The sputtering target substantially maintains its metallurgical characteristic and properties even though it has been diffusion-bonded to the backing plate. The solid-diffusion bonding of the target and backing plate, is achieved at a low temperature and pressure and results in interdiffusion of constituent atoms to attain high adhesion and bond strength without attendant deterioration or large deformation of the target material, while inhibiting the crystal growth in the target material. The bond undergoes no abrupt decrease in bond strength upon elevation of the service temperature. One hundred percent bonding is achieved with non-bonded portions such as pores left along the interface.

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Grove City, OH, United States of America

Eugene Y Ivanov