Semiconductor Manufacturing International (Shanghai) Corporation

Nvidia Corporation

Eugene Wang

Jinghua Ni

Yu Chen

Xudong Wan

Demi Shen

Gavin Chen

Liqi Guo

A subsystem configured to write data to a static random access memory cell employs a single N-channel MOS device connected to ground in each leg of the bi-stable memory cell to overdrive the stored data. The subsystem implements the dual control required to effect matrix operation of the SRAM cell in the gate circuit of the single N-channel MOS device in the drive path. Specifically, the column select signal controls a semiconductor junction that interrupts the data connection to the gate. In this manner, the column select control is removed from the drive path, thus increasing drive strength. Further, a second semiconductor junction connects the gate of the single NMOS device in the drive path when the gate signal is interrupted.

SRAM write driver with improved drive strength

A method and system for calibrating a plurality of measurement systems. The method includes obtaining a first plurality of calibration standards. The first plurality of calibration standards is associated with a plurality of predetermined values. Additionally, the method includes measuring the first plurality of calibration standards by a plurality of measurement systems to obtain a first plurality of measured values, processing information associated with the first plurality of measured values, and selecting a first measurement system from the plurality of measurement systems based on at least information associated with the first plurality of measured values. Moreover, the method includes calibrating the first measurement system with the first plurality of calibration standards, obtaining a second plurality of calibration standards, and measuring the second plurality of calibration standards by the first measurement system to obtain a second plurality of measured values.

Method and system for calibrating measurement tools for semiconductor device manufacturing

A method for using a calibration standard. The method includes providing a calibration standard. In a specific embodiment, the calibration standard has a substrate, a thickness of material having an edge region; and a conformal material of uniform thickness disposed on the edge region. The standard also has an upper surface pattern having the uniform thickness provided on the edge region. The method also includes using the upper surface pattern for a calibration process on a scanning electron microscope process.

Method and structure for sample preparation for scanning electron microscopes in integrated circuit manufacturing

Method and system for yield similarity of semiconductor devices. Embodiments of the present invention provides a method for yield similarity of semiconductor devices. The method includes providing a first plurality of semiconductor devices and a second plurality of semiconductor devices. The method also includes obtaining a first plurality of yields associated with a first yield related to the first plurality of semiconductor devices. The method further includes obtaining a second plurality of yields associated with a second yield related to the second plurality of semiconductor devices. The method also includes providing a processor and performing a first statistical analysis for the first plurality of yields using at least the processor. The method includes determining a first statistical distribution based on at least information associated with the first statistical analysis. The method includes performing a second statistical analysis for the second plurality of yields.

Method and system for yield similarity of semiconductor devices

A method and system for reliability similarity of semiconductor devices. The method includes providing a first plurality of semiconductor devices, providing a second plurality of semiconductor devices, and determining a first reliability associated with the first plurality of semiconductor devices. The first reliability is represented by at least a first probability density function. Additionally, the method includes determining a second reliability associated with the second plurality of semiconductor devices. The second reliability is represented by at least a second probability density function. Moreover, the method includes processing information associated with the first probability density function and the second probability density function, and determining a numerical number based on at least information associated with the first probability density function and the second probability density function. The numerical number is indicative of similarity between the first reliability and the second reliability.

Method and system for reliability similarity of semiconductor devices

A method and system for processing commonality of semiconductor devices. The method includes providing a first plurality of semiconductor devices, providing a second plurality of semiconductor devices, obtaining a first plurality of measured values corresponding to a characteristic associated with the first plurality of semiconductor devices, obtaining a second plurality of measured values corresponding to the characteristic associated with the second plurality of semiconductor devices, performing a first statistical analysis for the first plurality of measured values, determining a first statistical distribution, performing a second statistical analysis for the second plurality of measured values, and determining a second statistical distribution. Moreover, the method includes processing information associated with the first statistical distribution and the second statistical distribution, and determining an indicator. Also, the method includes processing information associated with the indicator, determining a confidence level, processing information associated with the confidence level, and determining whether the characteristic is stable.

Method and system for processing commonality of semiconductor devices

A method and system for yield similarity of semiconductor devices. The method includes providing a first plurality of semiconductor devices, providing a second plurality of semiconductor devices, obtaining a first plurality of yields associated with a first yield, and obtaining a second plurality of yields associated with a second yield. Additionally, the method includes performing a first statistical analysis for the first plurality of yields, determining a first statistical distribution, performing a second statistical analysis for the second plurality of yields, and determining a second statistical distribution. Moreover, the method includes processing information associated with the first statistical distribution and the second statistical distribution, and determining an indicator. Also, the method includes processing information associated with the indicator, determining a confidence level, processing information associated with the confidence level, and determining whether the first yield and the second yield are similar.

A method and system for processing commonality of semiconductor devices. The method includes providing a first plurality of semiconductor devices, providing a second plurality of semiconductor devices, obtaining a first plurality of measured values corresponding to a characteristic associated with the first plurality of semiconductor devices, and obtaining a second plurality of measured values corresponding to the characteristic associated with the second plurality of semiconductor devices. Additionally, the method includes performing a first statistical analysis, determining a first statistical distribution, performing a second statistical analysis, and determining a second statistical distribution. Moreover, the method includes processing information associated with the first statistical distribution and the second statistical distribution, and determining an indicator. Also, the method includes processing information associated with the indicator, determining a confidence level, processing information associated with the confidence level, and determining whether the characteristic is stable.

A method and system for processing stability of semiconductor devices. The method includes providing a first plurality of semiconductor devices, providing a second plurality of semiconductor devices, obtaining a first plurality of measured values corresponding to a characteristic, and obtaining a second plurality of measured values corresponding to the characteristic. Additionally, the method includes performing a first statistical analysis for the first plurality of measured values, determining a first statistical distribution, performing a second statistical analysis for the second plurality of measured values, and determining a second statistical distribution. Moreover, the method includes processing information associated with the first statistical distribution and the second statistical distribution, and determining an indicator. Also, the method includes processing information associated with the indicator, determining a confidence level, processing information associated with the confidence level, and determining whether the characteristic is stable.

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Shanghai, China

Eugene Wang