Kla Tencor Corporation

Kla Corporation

Kla-tencor Technologies Corporation

Eugene Shifrin

Ilya Bezel

Anatoly Shchemelinin

Kenong Wu

Matthew Derstine

Matthew Panzer

Lisheng Gao

Bjorn Brauer

Ashok V Kulkarni

Chien-Huei (Adam) Chen

Hong Chen

Ashok Mathew

Brian Duffy

Kris Bhaskar

Hucheng Lee

Anant Chimmalgi

Rudolf C Brunner

Masatoshi Yamaoka

Rajeev Patil

Xiaoming Wang

Chetana Bhaskar

Jincheng Wang

Shuo Sun

David Craig Oram

Tsung-Pao Fang

Qing Luo

Sumit Sen

Sreeram Chandrasekaran

Abhinav Mathur

Gildardo Rios Delgado

Rudy Flores Garcia

Ajay Gupta

Mohan Mahadevan

Santosh Bhattacharyya

Xiaochun Li

Richard William Solarz

Tao Luo

Jason Kirkwood

James A Smith

Pavel Kolchin

Raghav Babulnath

Yan Xiong

Gordon Rouse

Songnian Rong

John Raymond Jordan, Iii

Satya Kurada

Nurmohammed Patwary

Gangadharan Sivaraman

Kais Maayah

Graham Michael Lynch

Ramon Ynzunza

Benjamin Murray

Aravindh Balaji

Michael Cook

Govind Thattaisundaram

Wei Si

Neil Troy

Chwen-Jiann Fang

Ernesto Escorcia

Leon Yu

A system for generating laser sustained broadband light includes a pump source configured to generate a pumping beam, a gas containment structure for containing a gas and a multi-pass optical assembly. The multi-pass optical assembly includes one or more optical elements configured to perform a plurality of passes of the pumping beam through a portion of the gas to sustain a broadband-light-emitting plasma. The one or more optical elements are arranged to collect an unabsorbed portion of the pumping beam transmitted through the plasma and direct the collected unabsorbed portion of the pumping beam back into the portion of the gas.

High efficiency laser-sustained plasma light source with collection of broadband radiation

Systems and methods for detecting defects on a reticle are provided. One system includes computer subsystem(s) configured for performing at least one repeater defect detection step in front-end processing during an inspection process performed on a wafer having features printed in a lithography process using a reticle. The at least one repeater defect detection step performed in the front-end processing includes identifying any defects detected at corresponding locations in two or more test images by double detection and any defects detected by stacked defect detection as first repeater defect candidates. One or more additional repeater defect detections may be performed on the first repeater defect candidates to generate final repeater defect candidates and identify defects on the reticle from the final repeater defect candidates.

Print check repeater defect detection

Defects from a hot scan can be saved, such as on persistent storage, random access memory, or a split database. The persistent storage can be patch-based virtual inspector virtual analyzer (VIVA) or local storage. Repeater defect detection jobs can determined and the wafer can be inspected based on the repeater defect detection jobs. Repeater defects can be analyzed and corresponding defect records to the repeater defects can be read from the persistent storage. These results may be returned to the high level defect detection controller.

Repeater defect detection

Methods and systems for enhanced defect detection based on images collected by at least two imaging detectors at different times are described. In some embodiments, the time between image measurements is at least 100 microseconds and no more than 10 milliseconds. In one aspect, one or more defects of interest are identified based on a composite image of a measured area generated based on a difference between collected images. In a further aspect, measurement conditions associated with the each imaged location are adjusted to be different for measurements performed by at least two imaging detectors at different times. In some embodiments, the measurement conditions are adjusted during the time between measurements by different imaging detectors. Exemplary changes of measurement conditions include environmental changes at the wafer under measurement and changes made to the optical configuration of the inspection system.

Differential imaging for single-path optical wafer inspection

A system, method, and non-transitory computer readable medium are provided for tuning sensitivities of, and determining a process window for, a modulated wafer. The sensitivities for dies of the modulated wafer are tuned dynamically based on a single set of parameters. Further, the process window is determined for the modulated wafer from prior determined parameter-specific nominal process windows.

System, method and non-transitory computer readable medium for tuning sensitivities of, and determining a process window for, a modulated wafer

A plasma cell for use in a laser-sustained plasma light source includes a plasma bulb configured to contain a gas suitable for generating a plasma. The plasma bulb is transparent to light from a pump laser, wherein the plasma bulb is transparent to at least a portion of a collectable spectral region of illumination emitted by the plasma. The plasma bulb of the plasma cell is configured to filter short wavelength radiation, such as VUV radiation, emitted by the plasma sustained within the bulb in order to keep the short wavelength radiation from impinging on the interior surface of the bulb.

Plasma cell for providing VUV filtering in a laser-sustained plasma light source

High efficiency laser-sustained plasma light source

An imaging system utilizing atomic atoms is provided. The system may include a neutral atom source configured to generate a beam of neutral atoms. The system may also include an ionizer configured to collect neutral atoms scattered from the surface of a sample. The ionizer may also be configured to ionize the collected neutral atoms. The system may also include a selector configured to receive ions from the ionizer and selectively filter received ions. The system may also include one or more optical elements configured to direct selected ions to a detector. The detector may be configured to generate one or more images of the surface of the sample based on the received ions.

Neutral atom imaging system

A system for pumping laser sustained plasma and enhancing one or more selected wavelengths of output illumination generated by the laser sustained plasma is disclosed. In embodiments, the system includes one or more pump modules configured to generate pump illumination for the laser sustained plasma and one or more enhancing illumination sources configured to generate enhancing illumination at one or more selected wavelengths. The pump illumination may be directed along one or more pump illumination paths that are non-collinear to an output illumination path of the output illumination. The enhancing illumination may be directed along an illumination path that is collinear to the output illumination path of the output illumination so that the enhancing illumination is combined with the output illumination, thereby enhancing the output illumination at the one or more selected wavelengths.

System and method for pumping laser sustained plasma and enhancing selected wavelengths of output illumination

System, method and non-transitory computer readable medium for tuning sensitivies of, and determining a process window for, a modulated wafer

A system for separating plasma pumping light and collected broadband light includes a pump source configured to generate pumping illumination including at least a first wavelength, a gas containment element for containing a volume of gas, a collector configured to focus the pumping illumination from the pumping source into the volume of gas to generate a plasma within the volume of gas, wherein the plasma emits broadband radiation including at least a second wavelength and an illumination separation prism element positioned between a reflective surface of the collector and the pump source and arranged to spatially separate the pumping illumination including the first wavelength and the emitted broadband radiation including at least a second wavelength emitted from the plasma.

System and method for separation of pump light and collected light in a laser pumped light source

Systems and methods for detecting defects on a reticle are provided. One system includes computer subsystem(s) that include one or more image processing components that acquire images generated by an inspection subsystem for a wafer, a main user interface component that provides information generated for the wafer and the reticle to a user and receives instructions from the user, and an interface component that provides an interface between the one or more image processing components and the main user interface. Unlike currently used systems, the one or more image processing components are configured for performing repeater defect detection by applying a repeater defect detection algorithm to the images acquired by the one or more image processing components, and the repeater defect detection algorithm is configured to detect defects on the wafer using a hot threshold and to identify the defects that are repeater defects.

High sensitivity repeater defect detection

An optical system for generating broadband light via light-sustained plasma formation includes a chamber, an illumination source, a set of focusing optics, and a set of collection optics. The chamber is configured to contain a buffer material in a first phase and a plasma-forming material in a second phase. The illumination source generates continuous-wave pump illumination. The set of focusing optics focuses the continuous-wave pump illumination through the buffer material to an interface between the buffer material and the plasma-forming material in order to generate a plasma by excitation of at least the plasma-forming material. The set of collection optics receives broadband radiation emanated from the plasma.

Continuous-wave laser-sustained plasma illumination source

Growing community of inventors

Sunnyvale, CA, United States of America

Eugene Shifrin