Memc Electronic Materials, Inc.

Eugene R Hollander

Henry Frank Erk

Ronald D Bartram

Peter D Albrecht

Roland R Vandamme

Thomas E Doane

Guoqiang (David) Zhang

Jing Chai

Judith A Schmidt

Judy A Schmidt

The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.

Methods for etching the edge of a silicon wafer

Edge etched silicon wafers

Apparatus for cleaning semiconductor wafers comprises a tank for containing a liquid wherein the liquid has an upper surface. A wafer holder holds the semiconductor wafer in the tank with at least a portion of the semiconductor wafer being immersed in the liquid within the tank. A wafer-moving mechanism is constructed for engaging the semiconductor wafer in the tank to rotate the semiconductor wafer and to reciprocate the semiconductor wafer so that at least a central region of the wafer repeatedly passes through the surface of the liquid. The wafer-moving mechanism comprises first and second surfaces engageable with the semiconductor wafer and rotatable about respective first and second axes of rotation for rotating the wafer.

Apparartus for cleaning semiconductor wafers

A method of cleaning a semiconductor wafer comprises placing liquid in a bath with a gas-liquid-interface defined at the surface of the liquid. A semiconductor wafer is placed in the bath so that it is oriented in a generally upright position with at least part of the wafer being in the liquid and below the gas-liquid-interface. Sonic energy is directed through the liquid. At least one of the position of the semiconductor wafer and the level of liquid in the bath relative to the semiconductor wafer is varied so that the entire surface of the wafer repeatedly passes through the gas-liquid-interface.

Apparatus for cleaning semiconductor wafers

Method for cleaning semiconductor wafers with sonic energy and passing

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Wentzville, MO, United States of America

Eugene R Hollander