Micron Technology Incorporated

Eugene R Gifford

Sanh D Tang

Robert James Burke

Chih-Chen Cho

Anuradha Iyengar

A semiconductor device includes a cross diffusion barrier layer sandwiched between a gate layer and an electrode layer. The gate layer has a first gate portion of doped polysilicon of first conductivity type adjacent to a second gate portion doped polysilicon of second conductivity type. The cross diffusion barrier layer includes a combination of silicon and nitrogen. The cross diffusion barrier layer adequately prevents cross diffusion between the first and second gate portions while causing no substantial increase in the resistance of the gate layer.

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Kuna, ID, United States of America

Eugene R Gifford