Micron Technology Incorporated

Twist Bioscience Corporation

Sony Corporation

Round Rock Research, LLC

Other

Micron Semiconductor, Inc.

Micro Technology, Inc.

Eugene P Marsh

Timothy A Quick

Stefan Uhlenbrock

Brenda D Kraus

Gurtej S Sandhu

Pierre F Indermuhle

Bill James Peck

Brian A Vaartstra

Dan B Millward

Andres Fernandez

William Banyai

Jun Liu

Scott E Sills

Chet E Carter

David R Atwell

Joseph E Geusic

Siyuan Chen

David Stern

Durai Vishak Nirmal Ramaswamy

Cem Basceri

Garo Jacques Derderian

Donald L Westmoreland

Joel A Drewes

Joseph Neil Greeley

Paul Castrovillo

Tim Quick

Trung Tri Doan

John A Smythe

Nishant Sinha

Daryl C New

Neil Joseph Greeley

Defined sequence RNA synthesis by 3'&#x2192;5&#x2032; direction is now well established and currently in use for synthesis and development of vast variety of therapeutic grade RNA and Si RNA etc. A number of such synthetic RNA requires a modification or labeling of 3&#x2032;-end of an oligonucleotide. The synthesis of 3&#x2032;-end modified RNA requiring lipophilic, long chain ligands or chromophores, using 3&#x2032;&#x2192;5&#x2032; synthesis methodology is challenging, requires corresponding solid support and generally results in low coupling efficiency and lower purity of the final oligonucleotide in general because of large amount of truncated sequences containing desired hydrophobic modification. We have approached this problem by developing reverse RNA monomer phosphoramidites for RNA synthesis in 5&#x2032;&#x2192;3&#x2032;-direction. They lead to very clean oligonucleotide synthesis allowing for introduction of various modifications at the 3&#x2032;-end.

Heated nanowells for polynucleotide synthesis

Methods and devices are provided herein for surfaces for de novo nucleic acid synthesis which provide for low error rates. In addition, methods and devices are provided herein for increased nucleic acid mass yield resulting from de novo nucleic acid synthesis.

Methods and devices for de novo oligonucleic acid assembly

Devices and methods for de novo synthesis of large and highly accurate libraries of oligonucleic acids are provided herein. Devices include structures having a main channel and microchannels, where the microchannels have a high surface area to volume ratio. Devices disclosed herein provide for de novo synthesis of oligonucleic acids having a low error rate.

Devices and methods for oligonucleic acid library synthesis

A method of forming a metal chalcogenide material. The method comprises introducing a metal precursor and a chalcogenide precursor into a chamber, and reacting the metal precursor and the chalcogenide precursor to form a metal chalcogenide material on a substrate. The metal precursor is a carboxylate of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid. The chalcogenide precursor is a hydride, alkyl, or aryl precursor of sulfur, selenium, or tellurium or a silylhydride, silylalkyl, or silylaryl precursor of sulfur, selenium, or tellurium. Methods of forming a memory cell including the metal chalcogenide material are also disclosed, as are memory cells including the metal chalcogenide material.

Methods of forming a memory cell comprising a metal chalcogenide material

Compositions, devices, methods and systems are provided for differential functionalization of a surface of a structure to support biopolymer synthesis. Provided herein are processes which include use of lamps, lasers, and/or microcontact printing to add functional groups to surfaces for the efficient and uniform synthesis of oligonucleic acids.

Functionalized surfaces and preparation thereof

Devices for the manufacturing of high-quality building blocks, such as oligonucleotides, are described herein. Nano-scale devices allow for selective control over reaction conditions. Further, methods and devices described herein allow for the rapid construction of large libraries of highly accurate nucleic acids.

Some embodiments include methods utilizing atomic layer deposition to form material containing silicon and nitrogen (e.g., silicon nitride). The atomic layer deposition uses SiIas one precursor and uses a nitrogen-containing material as another precursor. Some embodiments include methods of forming a structure in which a chalcogenide region is formed over a semiconductor substrate; and in which SiIis used as a precursor during formation of silicon nitride material directly against a surface of the chalcogenide region.

Methods of forming and using materials containing silicon and nitrogen

Memory cells are disclosed, which cells include a cell material and an ion-source material over the cell material. A discontinuous interfacial material is included between the cell material and the ion-source material. Also disclosed are fabrication methods and semiconductor devices including the disclosed memory cells.

Memory cells, semiconductor devices including the memory cells, and methods of operation

Memory cells including a metal chalcogenide material and related methods

Resistive memory having confined filament formation is described herein. One or more method embodiments include forming an opening in a stack having a silicon material and an oxide material on the silicon material, and forming an oxide material in the opening adjacent the silicon material, wherein the oxide material formed in the opening confines filament formation in the resistive memory cell to an area enclosed by the oxide material formed in the opening.

Resistive memory having confined filament formation

Growing community of inventors

Boise, ID, United States of America

Eugene P Marsh