International Business Machines Corporation

Other

Samsung Electronics Co., Ltd.

Infineon Technologies Ag

Globalfoundries Inc.

Crocus Technology Inc.

Eugene John O'Sullivan

Naigang Wang

Hariklia Deligianni

Bruce Bennett Doris

William Joseph Gallagher

Lubomyr Taras Romankiw

Anthony J Annunziata

Daniel C Edelstein

Bucknell Chapman Webb

Nathan P Marchack

Philipp Herget

Janusz Jozef Nowak

Robert Fontana

Michael C Gaidis

Maurice McGlashan-Powell

Chandrasekharan Kothandaraman

Alejandro Gabriel Schrott

George Frederick Walker

Sung Kwon Kang

Michael F Lofaro

Gen Pei Lauer

David William Abraham

Carlos Juan Sambucetti

Andrew John Kellock

Maurice Mason

Sivananda K Kanakasabapathy

Sufi Zafar

Eric Andrew Joseph

Solomon Assefa

Henry K Utomo

Terrence Robert O'Toole

Suryanarayana Kaja

Keith E Fogel

Josephine B Chang

Michael A Guillorn

Alfred Grill

Sampath Purushothaman

Cyril Cabral, Jr

Timothy Joseph Dalton

Christian Lavoie

Daniel Christopher Worledge

Paul Andrew Moskowitz

Paul Alfred Lauro

Sandra Guy Malhotra

Brian Samuel Beaman

Da-Yuan Shih

David Lee Rath

Michael John Brady

Mahadevaiyer Krishnan

Alessandro Cesare Callegari

Krystyna Waleria Semkow

Katherina E Babich

Sebastian Ulrich Engelmann

John Gerard Gaudiello

Judith Marie Roldan

Joonah Yoon

Donald J Mikalsen

Edward August Giess

Sheldon C Rieley

Pouya Hashemi

Cyprian Emeka Uzoh

Chanro Park

Evan G Colgan

Qinghuang Lin

Paul Stephen Andry

Joshua T Smith

Hiroyuki Miyazoe

Deborah A Neumayer

Benjamin H Wunsch

Emanuel Israel Cooper

Li-Wen Hung

Ravi F Saraf

Ho-Ming Tong

Robert L Sandstrom

Jeong-Heon Park

Robert B Laibowitz

Vlasta A Brusic

Gregory Costrini

Christopher D Sheraw

Cornelia Tsang Yang

Peter M Fryer

Gill Yong Lee

Stephen L Brown

Chandrasekara Kothandaraman

HsinYu Tsai

Walter Glashauser

Jeffrey R Marino

Milan Paunovic

Steve Donald Holmes

Karthik Yogendra

Bodil E Braren

Joachim Nuetzel

Rohit Kilaru

Erwan Gapihan

John Christopher Flake

Junghyuk Lee

William S Graham

Adele L Pacquette

Chandrasekaran Kothandaraman

Shyama P Mukherjee

A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is removed to produce a metal beam separated from the silicon substrate by a space.

Micro-electromechanical device having a soft magnetic material electrolessly deposited on a palladium layer coated metal beam

A method of forming a microfluidic device is disclosed. The method includes forming a first dielectric layer on a substrate, forming electrodes partially into the first dielectric layer, and forming a second dielectric layer on the electrodes. The method includes filling, with a metal material, two wells formed in the second dielectric layer such that the metal material is in direct contact with the electrodes. The method includes forming a third dielectric layer on the metal material and second dielectric layer. The method includes filling, with a structural material, a channel formed between the wells such that the structural material does not directly contact the electrodes. The method includes forming a fourth dielectric layer on the third dielectric layer and the structural material, extracting the structural material through at least one vent hole in the fourth dielectric layer, and forming a fifth dielectric layer on the fourth dielectric layer.

Tailorable electrode capping for microfluidic devices

Embodiments are directed to a method of forming a magnetic stack arrangement of a laminated magnetic inductor having a high frequency peak quality factor (Q). A first magnetic stack is formed having one or more magnetic layers alternating with one or more insulating layers in a first inner region of a laminated magnetic inductor. A second magnetic stack is formed opposite a surface of the first magnetic stack in an outer region of the laminated magnetic inductor. A third magnetic stack is formed opposite a surface of the second magnetic stack in a second inner region of the laminated magnetic inductor. The insulating layers are formed such that a thickness of an insulating layer in the second magnetic stack is greater than a thickness of an insulating layer in the first magnetic stack.

Laminated magnetic inductor stack with high frequency peak quality factor

A semiconductor device and a method for fabricating the same. The semiconductor device includes a substrate and at least one trench line formed within the substrate. The semiconductor device further includes a self-aligned landing pad in contact with the at least one trench line, and a magnetic tunnel junction stack formed on and in contact with the self-aligned landing pad. The method includes forming a conductive layer on and in contact with at least one trench line formed within a substrate. Magnetic tunnel junction stack layers are deposited on and in contact with the conductive layer. The magnetic tunnel junction stack layers are etched to form a magnetic tunnel junction stack, where the etching stops on the conductive layer.

Self-aligned and misalignment-tolerant landing pad for magnetoresistive random access memory

Embodiments of the invention are directed to a method of fabricating a yoke arrangement of an inductor. A non-limiting example method includes forming a dielectric layer across from a major surface of a substrate. The method further includes configuring the dielectric layer such that it imparts a predetermined dielectric layer compressive stress on the substrate. A magnetic stack is formed on an opposite side of the dielectric layer from the substrate, wherein the magnetic stack includes one or more magnetic layers alternating with one or more insulating layers. The method further includes configuring the magnetic stack such that it imparts a predetermined magnetic stack tensile stress on the dielectric layer, wherein a net effect of the predetermined dielectric layer compressive stress and the predetermined magnetic stack tensile stress on the substrate is insufficient to cause a portion of the major surface of the substrate to be substantially non-planar.

Stress management for thick magnetic film inductors

Embodiments are directed to a method of forming a laminated magnetic inductor and resulting structures having multiple magnetic layer thicknesses. A first magnetic stack having one or more magnetic layers alternating with one or more insulating layers is formed in a first inner region of the laminated magnetic inductor. A second magnetic stack is formed opposite a major surface of the first magnetic stack in an outer region of the laminated magnetic inductor. A third magnetic stack is formed opposite a major surface of the second magnetic stack in a second inner region of the laminated magnetic inductor. The magnetic layers are formed such that a thickness of a magnetic layer in each of the first and third magnetic stacks is less than a thickness of a magnetic layer in the second magnetic stack.

Magnetic inductor with multiple magnetic layer thicknesses

Embodiments of the invention include a method of using a sensor. The method includes accessing a sample and exposing the sample to the sensor. The sensor includes a sensing circuit having with a field effect transistor (FET) having a gate structure. A cavity is formed in a fill material that is over the gate structure. A probe of the sensor is within a portion of the cavity. An upper region of the probe is above a top surface of the fill material, and a lower region of the probe is below the top surface of the fill material. The probe structure includes a 3D sensing surface structure, and a liner is formed on the 3D sensing surface and configured to function as a recognition element. A portion of the liner is on the lower region of the probe and positioned between sidewalls of the cavity and the 3D sensing surface.

Biosensor electrode having three-dimensional structured sensing surfaces

Embodiments of the invention are directed to a sensor that includes a sensing circuit and a probe communicatively coupled to the sensing circuit. The probe includes a three-dimensional (3D) sensing surface coated with a recognition element and configured to, based at least in part on the 3D sensing surface interacting with a predetermined material, generate a first measurement. In some embodiments, the 3D sensing surface is shaped as a pyramid, a cone, or a cylinder to increase the sensing surface area over a two-dimensional (2D) sensing surface. In some embodiments, the 3D sensing surface facilitates penetration of the 3D sensing surface through the wall of the biological cell.

Embodiments are directed to a method of forming a laminated magnetic inductor and resulting structures having anisotropic magnetic layers. A first magnetic stack is formed having one or more magnetic layers alternating with one or more insulating layers. A trench is formed in the first magnetic stack oriented such that an axis of the trench is perpendicular to a hard axis of the magnetic inductor. The trench is filled with a dielectric material.

Magnetic inductor with shape anisotrophy

A method for fabricating a magnetic material stack on a substrate, comprises forming a first dielectric layer, forming a first magnetic material layer on the first dielectric layer, forming at least a second dielectric layer on the first magnetic material layer and forming at least a second magnetic material layer on the second dielectric layer. During one or more of the forming steps, a surface smoothing operation is performed to remove at least a portion of surface roughness on the layer being formed.

Method for fabricating a magnetic material stack

Micro-electromechanical device having a soft magnetic material electrolessly deposited on a metal layer

Stress management scheme for fabricating thick magnetic films of an inductor yoke arrangement

An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.

High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors

A spin-transfer torque magneto-resistive random access memory (STT-MRAM) device is provided. The STT-MRAM device includes a substrate, a dielectric layer and a magnetic tunnel junction (MTJ) stack. The substrate includes a conductor and a landing pad. The MTJ stack includes a reference layer element, a free layer assembly and a barrier layer element. The reference layer element is lined with redeposited metal and is disposed on the landing pad within the dielectric layer. The free layer assembly includes a free layer element, a hard mask layer element disposed on the free layer element, redeposited metal lining sidewalls of the free and hard mask layer elements and dielectric material lining the redeposited metal. The barrier layer element is interposed between and has a same width as the reference layer element and the free layer assembly.

Short circuit reduction in magnetic tunnel junctions

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Nyack, NY, United States of America

Eugene John O'Sullivan