USA As Represented by Secretary of the Navy

University of California

Northrop Grumman Systems Corporation

Eugene I Imhoff

Karl D Hobart

Travis J Anderson

Marko J Tadjer

Andrew D Koehler

Vincent Gambin

Joshua D Caldwell

Tatyana I Feygelson

Ioulia Smorchkova

Bradford B Pate

Mark Goorsky

Gregory Todd Lewis

Rajinder S Sandhu

Jeff McKay

A method for fabricating a semiconductor device, such as a GaN high electron mobility transistor (HEMT) device, including etching a thermal via into a back-side of a semiconductor substrate and depositing a diamond nucleation seed layer across the back-side of the substrate. The method further includes coating the diamond nucleation with a mask layer and removing mask material outside of the thermal via on the planar portions of the back-side of the substrate. The method includes removing portions of the diamond nucleation layer on the planar portions and then removing the remaining portion of the mask material in the thermal via. The method then includes depositing a bulk diamond layer within the thermal via on the remaining portion of the diamond nucleation layer so that diamond only grows in the thermal via and not on the planar portions of the substrate.

Selective deposition of diamond in thermal vias

Growing community of inventors

Washington, DC, United States of America

Eugene I Imhoff