Freescale Semiconductor,inc.

Commissariat a L'energie Atomique

Eugene Blanchet

Bishnu Prasanna Gogoi

Bernard Diem

The invention relates to inter-level realignment after a stage of epitaxy on a face () of a substrate (), comprising the production of at least one initial guide mark () on the face of the substrate, this initial guide mark being designed so as to be transferred, during epitaxy, onto the surface of the epitaxied layer (). The initial guide mark () is produced in such a way that, during epitaxy, its edges create growth defects that propagate as far as the surface of the epitaxied layer () to provide a transferred guide mark () on the surface of the epitaxied layer () reproducing the shape of the initial guide mark () and in alignment with the initial guide mark.

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Saint Egreve, France

Eugene Blanchet