International Business Machines Corporation

Eugene A Irene

Victor J Silvestri

Mousa H Ishaq

Stanley Roberts

Ning Hsieh

Stanley Zirinsky

An improved method of fabricating a stable high dielectric constant and low leakage dielectric material includes oxidizing at a temperature of about 400.degree. C. or higher a layer of a transition metal-silicon alloy having 40% to 90% transition metal by atomic weight to produce a silicate or homogeneous mixture. The mixture includes an oxide of the transition metal and silicon dioxide. The alloy may be deposited on, e.g., a semiconductor or an electrically conductive layer that is oxidation resistant, and the thickness of the mixture or oxidized alloy should be within the range of 5 to 50 nanometers. By depositing an electrically conductive layer on the homogeneous mixture, a capacitor having a high dielectric, low leakage dielectric medium is provided.

Method of making high dielectric constant insulators and capacitors

Method for depositing a layer containing Al; N, and Si on a substrate which comprises providing a substrate to be coated, a carrier gas, and a gaseous mixture of nitrogen source compounds, aluminum source compounds and silicon source material and heating the substrate to a temperature in the range of about 500.degree. to about 1,300.degree. C to thereby cause formation on the substrate of a layer containing Al, N, and Si; and products obtained by the method.

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Wappingers Falls, NY, United States of America

Eugene A Irene