Alcatel

Alcatel N.v.

Alcatel Alsthom Compagnie Generale D'electricite

Eugen Lach

Wilfried Idler

Michael Schilling

Klaus Wunstel

Michael Schmidt

Yann Frignac

Gert Laube

Sébastien Bigo

Lars Dembeck

Jorg Schmitz

Karin Grosskopf

A receiver for an OTDM/PDM pulse train () in which the pulses () have alternating polarizations (PP) has a polarization insensitive optical switch () for isolating optical pulses (') within the pulse train (), and a polarization selective element () for separating from the isolated pulses (&#x2032;) at least one component that has a single polarization. This allows to considerable relax the constraints posed on the switch since components in the isolated pulses that result from interchannel interference can, at least to a large extent, be eliminated by the subsequent polarization selective element ().

Receiver for OTDM/PDM optical signals

The invention shows a transmission system with a transmitter function, a transmitting fiber and a receiver function where the transmitter function comprising lightsources (), modulators () and a multiplexer (), and the receiver comprising at least a demultiplexer (), filters and electrical receivers where the channels for left side filtering are modulated with modulators with a negative chirp and for right side filtering with modulators with positive chirp.

Modulation scheme and transmission system for NRZ signals with left and right side filtering

An integrated optoelectronic semiconductor component is presented, which can equally process light signals of any polarization direction. Such semiconductor components are used for digital optical telecommunications. The semiconductor component has active (A) and passive (B) waveguide sections, which comprise a number of semiconductor layers (SP) with so-called multiple quantum well structures. The semiconductor layers (SP) are deposited by a process known as selective area growth (SAG). A portion of the semiconductor layers has a lattice constant which is smaller than the lattice constant of a substrate (SUB). This creates a biaxial tensile strain in these layers. The tensile strain is optimized in the active waveguide sections (A) to attain polarization independence. Furthermore a process is described whereby such a semiconductor component can be manufactured.

Monolithic integrated optoelectronic semiconductor component and process

The invention concerns an optically controlled optical switching module (SM1), as well as a method of optically controlling an optical switching network, and an optical switching network. The optical switching module (SM1) is equipped with at least one optical switch (OCOSW), which is controlled through an optical control input (CONTR), which switches a useful optical signal. The optical switching module (SM1) furthermore has an optical pulse shaper (PW) that is connected to this control input (CONTR), which produces switching pulses that are suitable for the optical switch (OCOSW), from an optical control signal. The optical switching network contains at least one optical switching module (SM1). Control bits from an optical data packet are individually masked out in the optical switching network by means of optical switches (OSW), and the optical control signals corresponding to the respective control bits (CB1 to CB4) are fed to one of the optical pulse shapers (PW).

Optically controlled optical switching module, method of optically

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Marbach, Germany

Eugen Lach