Applied Materials, Inc.

Eu Jin Lim

James P Cruse

Benjamin Schwarz

Adauto Diaz, Jr

Andrew Nguyen

Li Zhang

Jared Ahmad Lee

Zhuang Li

Scott M Williams

Xiaoliang Zhuang

Guowen Ding

Mark Naoshi Kawaguchi

Changhun Lee

Charles Hardy

Chungdee Pong

Methods for removing halogen-containing residues from a substrate are provided. By combining the heat-up and plasma abatement steps, the manufacturing throughput can be improved. Further, by appropriately controlling the pressure in the abatement chamber, the removal efficiency can be improved as well.

Method for removing halogen-containing residues from substrate

Methods for reducing the contamination of a gas distribution plate are provided. In one embodiment, a method for processing a substrate includes transferring the substrate into a chamber, performing a treating process on the substrate, and providing a purge gas into the chamber before or after the treating process to pump out a residue gas relative to the treating process from the chamber. The treating process includes distributing a reactant gas into the chamber through a gas distribution plate.

Method extending the service interval of a gas distribution plate

A method for controlling corrosion of a substrate is provided herein. In one embodiment, a method for controlling corrosion of a substrate includes the steps of providing a substrate having a patterned photoresist layer with a metallic residue disposed thereon; exposing the substrate to a hydrogen-based plasma to remove the metallic residue; and removing the photoresist. The metallic residue may comprise residue from etching at least one of aluminum or copper. The metallic residue may further comprise a halogen compound from etching a metal-containing layer with a halogen-based process gas. The hydrogen-based plasma may comprise hydrogen (H) and may further comprise at least one of nitrogen (N) and water (HO) vapor. The hydrogen-based plasma may further comprise an inert gas, such as argon (Ar).

Method for controlling corrosion of a substrate

Methods for processing substrates in dual chamber processing systems comprising first and second process chambers that share resources may include performing a first internal chamber clean in each of the first process chamber and the second process chamber; and subsequently processing a substrate in one of the first process chamber or the second process chamber by: providing a substrate to one of the first process chamber or the second process chamber; providing a process gas to the first process chamber and the second process chamber; forming a plasma in only the one of the first process chamber or the second process chamber having the substrate contained therein; and providing an inert gas to the first process chamber and the second process chamber via one or more channels formed in a surface of respective substrate supports disposed in the first process chamber and the second process chamber while processing the substrate.

Methods for processing substrates in a dual chamber processing system having shared resources

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Sunnyvale, CA, United States of America

Eu Jin Lim