Seoul Opto Device Co., Ltd.

Seoul Viosys Co., Ltd.

Seoul Vlosys Co., Ltd.

Eu Jin Hwang

Yeo Jin Yoon

Jae Ho Lee

Jong Lam Lee

Dae Won Kim

Jun Hee Lee

Jong Kyu Kim

Lacroix Yves

Jae-Ho Lee

Dae-Won Kim

Joo Won Choi

Kyoung Hoon Kim

Dong Seon Lee

A light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and the second semiconductors, a conductive material on the second semiconductor layer, an inclined surface, a first insulation layer overlaps each light emitting cell, an electrically conductive material overlaps the first insulation layer to couple two of the plurality of light emitting cells, and a second insulation layer overlaps the electrically conductive material. A light-transmitting material is used in both the first insulation layer and the second insulation layer. The inclined surface is continuous and has a slope of approximately 20&#xb0; to approximately 80&#xb0; from a horizontal plane based on the substrate.

Light emitting device

The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20&#xb0; to 80&#xb0; from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20&#xb0; to 80&#xb0; from a horizontal plane.

Light emitting device and method of manufacturing the same

The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80&#xb0; from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80&#xb0; from a horizontal plane.

Disclosed is an AC light emitting device having photonic crystal structures and a method of fabricating the same. The light emitting device includes a plurality of light emitting cells and metallic wirings electrically connecting the light emitting cells with one another. Further, each of the light emitting cells includes a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. In addition, a photonic crystal structure is formed in the second conductive type semiconductor layer. The photonic crystal structure prevents light emitted from the active layer from laterally propagating by means of a periodic array, such that light extraction efficiency of the light emitting device can be improved. Furthermore, the metallic wirings electrically connect a plurality of light emitting cells with one another such that an AC light emitting device can be provided.

Ac light emitting device having photonic crystal structure and method of fabricating the same

The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80&#xb0; from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80&#xb0; from a horizontal plane. Further, the present invention provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.

The present invention relates to a light emitting device. The light emitting device according to the present invention comprises a light emitting cell block having a plurality of light emitting cells; and a bridge rectifying circuit connected to input and output terminals of the light emitting cell block, wherein the bridge rectifying circuit includes a plurality of diodes between nodes. In manufacturing an AC light emitting device with a bridge rectifying circuit built therein, the present invention can provide a light emitting device capable of enhancing the reliability and luminance of the light emitting device by setting the size of diodes of the bridge rectifying circuit to be a certain size and controlling the number thereof.

Light emitting device with light emitting cells arrayed

The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80&#xb0; from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80&#xb0; from a horizontal plane. Further, the present invention is provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.

Method of fabricating AC light emitting device having photonic crystal structure

The present invention relates to a light emitting device. According to the present invention, the light emitting device comprises a substrate, a plurality of light emitting cells disposed on the substrate, a first insulation layer disposed on each light emitting cell, an electrically conductive material disposed on the first insulation layer to couple two of the light emitting cells, and a second insulation layer disposed on the electrically conductive material. Each light emitting cell comprises a first semiconductor layer, a second semiconductor layer, and an inclined surface. The second insulation layer corresponds to a contour of each light emitting cell.

A method of forming high quality nitride semiconductor layers on a patterned substrate and a light emitting diode having the same are disclosed. After forming a nucleation layer on the patterned substrate, a first 3D and 2D growth layers are formed thereon in this order by growing nitride semiconductor layers in 3D and 2D growth conditions. Then, a second 3D growth layer is formed on the first 2D growth layer by growing a nitride semiconductor layer in another 3D growth condition, and a second 2D growth layer is formed on the second 3D growth layer by growing a nitride semiconductor layer in another 2D growth condition. As such, the thickness of the 3D growth layer can be reduced by alternately forming the 3D and 2D growth layers, thereby preventing the 3D growth layer from having a rough surface and improving crystal quality of the final 2D growth layer.

Growing community of inventors

Ansan-si, South Korea

Eu Jin Hwang