Systems on Silicon Manufacturing Company Pte. Ltd.

Eu Gene Glen Foo

Yong Han Frankie Low

Kwang Ye Sim

A method and system for determining a predicted flash endurance Vt of a flash cell after N program/erase cycles. The method includes measuring a Vtp value and a Vte value of the flash cell after a cycle number in a range from 2000 to less than N/2 program/erase cycles; calculating a Vtp slope of a line starting from the measured Vtp value in a half logarithmic graph representation based on historical test data from flash cells of wafers having substantially the same process steps compared to the flash cell under investigation; calculating a Vte slope of a line starting from the measured Vte value in a half logarithmic graph representation based on the historical test data; and determining the Vtp and Vte values at 2 million program/erase cycles by extrapolating from the measured Vte and Vtp values.

Method and system for determining a predicted flash endurance Vt of a flash cell after N program/erase cycles

A method of determining the time to failure of parallel electro migration test structures is described. The method generally includes the steps of: measuring the resistance of the complete structure; calculating the resistance of the n individual parallel structures from the measured resistance; calculating the resistance of the complete structure after the failure of m individual parallel structures, for m=1 to n; and recording the time of failure for each m as the time when the resistance is approximately the value predicted for m fails.

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Singapore, Singapore

Eu Gene Glen Foo