Other

Altera Corporation

Eu Geen Chew

Wei Yee Koay

Boon Jin Ang

Tat Mun Lui

Chin Ghee Ch'ng

Zun Yang Tan

Integrated circuits with memory cells are provided. The memory cells may be arranged in rows and columns. Each column of memory cells may be coupled to a respective pair of data lines. The data lines may be precharged using precharge circuitry. The precharge circuitry may include n-channel precharge transistors, an equalizer transistor, an isolation transistor, a pull-down transistor, a voltage booster, and control logic. The voltage booster may provide boosted voltage signal for overdriving the n-channel transistors by pulsing a control signal. During first pulse of the control signal, the data lines may be charged up to an intermediate voltage level. During second pulse of the control signal, the data lines may be charged up to a positive power supply voltage level that is greater than the intermediate voltage level. Performing double boosted data line precharge in this way can help reduce leakage and improve memory performance.

Methods and apparatus for performing boosted bit line precharge

Circuits for a memory array and a method of operating a configurable memory block are disclosed. An embodiment of the disclosed memory circuits includes a first memory block coupled to a second memory block to form an array of memory blocks. Each of the memory blocks has multiple bit lines with a dedicated address decoder coupled to the bit lines from each of the memory blocks. Switches are placed in between the first and second memory blocks such that each of the bit lines from the first memory block is connected to a corresponding bitline from the second memory block through one of the switches. The switches may be used to either connect the second memory block to the first memory block or disconnect the second memory block from the first memory block.

Configurable memory block

Growing community of inventors

Batu Maung, Malaysia

Eu Geen Chew