Arm Limited

Infineon Technologies Ag

Ettore Amirante

Yew Keong Chong

Andy Wangkun Chen

Sriram Thyagarajan

Sony

Ayush Kulshrestha

Martin Ostermayr

Peter Huber

Marlin Wayne Frederick, Jr

Thomas Fischer

Vivek Asthana

Vincent Philippe Schuppe

Ronald Paxton Preston

Yulin Shi

Jean-Christophe Vial

Various implementations described herein are related to a device including a bitcell having a bitcell layout with a first metal layer, a second metal layer and a via programming layer. The device may have a via marking layer provided in the bitcell layout for the bitcell, and the via marking layer controls optical proximity correction of the first metal layer and the second metal layer.

Masking techniques for memory applications

Various implementations described herein are related to various devices having a frontside power network with frontside supply rails and a backside power network with backside supply rails. The device may include intermixing architecture with transition vias that couple the frontside power network to the backside power network. The intermixing architecture may transition the frontside supply rails of the frontside power network to the backside supply rails of the backside power network.

Frontside-to-backside intermixing architecture for coupling a frontside network to a backside network

Various implementations described herein are directed to an apparatus having a processor and memory having instructions stored thereon that, when executed by the processor, cause the processor to identify conductive paths in a physical layout of an integrated circuit having nodal features that define a connective structure of the integrated circuit. The instructions may cause the processor to traverse the conductive paths to detect valid metals and redundant metals. The valid metals may refer to valid conductive paths between the nodal features that conjoin the nodal features. The redundant metals may refer to unused conductive paths that provide disjointed paths from the nodal features. The instructions may cause the processor to indicate the valid metals as marked with a first indicator and to indicate the redundant metals as unmarked with a second indicator that is different than the first indicator.

Circuit layout techniques

Various implementations described herein refer to a device having backside power rails including first backside power rails that supply a core voltage to memory logic and second backside power rails that supply a periphery voltage to control logic. In some implementations, at least one first backside power rail may have a rail break that interrupts continuity so as to allow at least one second backside power rail to supply the periphery voltage to the control logic.

Backside power rail architecture

Various implementations described herein are related to a device having memory circuitry with a bitcell array. The device may include a frontside power network that is coupled to the bitcell array, and the device may include a backside power network that provides power to the bitcell array. The device may include transition vias that couple the backside power network to the frontside power network, and the backside power network may provide power to the bitcell array by way of the transition vias being coupled to the frontside power network.

Buried power rail structure for providing multi-domain power supply for memory device

Various implementations described herein are related to a device with a backside power network. The backside power network may have a buried power rail that is coupled to ground. The device may have a read-only memory (ROM) cell that is coupled between at least one bitline and the buried power rail, and the ROM cell may be coupled to ground by way of the buried power rail.

Bitcell architecture with buried ground rail

Various implementations described herein are related to a device with a frontside power network and a backside power network. The frontside power network may include frontside supply rails coupled to logic circuitry, and also, the backside power network may include buried supply rails. Also, at least one buried supply rail of the buried supply rails may be used as a backside signal path for providing at least one critical signal net to the logic circuitry.

Buried metal technique for critical signal nets

Various implementations described herein are related to a device having a bitcell. The device may include horizontal bitlines coupled to the bitcell. The horizontal bitlines may include multiple first read bitlines disposed in a horizontal direction with respect to the bitcell. The device may include vertical bitlines coupled to the bitcell. The vertical bitlines may include multiple second read bitlines disposed in a vertical direction with respect to the bitcell.

Bitcell with multiple read bitlines

Various implementations described herein refer to a method. The method may include providing a metal layout for an integrated circuit, wherein the metal layout includes multiple lines associated with bitlines. The method may include inserting at least one additional line between the multiple lines and the bitlines. The method may include arranging the at least one additional line with respect to the multiple lines and the bitlines so as to reduce capacitance associated with the bitlines.

Metal layout techniques

A system for terminating a homogenous cell array is disclosed. A preferred embodiment comprises a plurality of homogenous cells arranged in rows and columns to form the homogenous cell array, wherein a first homogenous cell of each column is electrically differently connected than a rest of the homogenous cells of the column.

Homogenous cell array

Implementations are presented herein that relate to a memory cell, a memory device, a device and a method of accessing a memory cell.

Growing community of inventors

Nice, France

Ettore Amirante