Matsushita Electric Industrial Co., Ltd.

Rohm Co., Ltd.

Etsuyoshi Kobori

Takeshi Yamashita

Susumu Matsumoto

Hiroshi Yuasa

Michinari Yamanaka

Tetsuo Satake

An inventive method for fabricating a semiconductor device includes the steps of: a) forming trenches in an actual element region and a dummy pattern region of a substrate by using a mask; b) depositing an insulator over the substrate, thereby forming an insulating film that fills at least the trenches; and c) removing a portion of the insulating film protruded from the trenches, thereby forming, in the trenches within the actual element region, a first embedded insulating film for isolation, and forming a second embedded insulating film in the trenches within the dummy pattern region. The dummy pattern region has dummy patterns in which no trenches are formed, and the widthwise size of each dummy pattern is four times or less of the depth of a portion of each trench provided in the substrate.

Semiconductor device having an STI structure and a dummy pattern with a rectangular shape

After a hole is formed in a low dielectric constant film on a substrate, a protective film is formed on the wall surface of the hole or an electron acceptor is caused to be adsorbed by or implanted in the low dielectric constant film exposed at the wall surface of the hole. Otherwise, resist residue is left on the wall surface of the hole. Then, a resist pattern having an opening corresponding to a wire formation region including a region formed with the hole is formed by using a chemically amplified resist.

Method for fabricating electronic device

Method of fabricating semiconductor device, and semiconductor device

Wiring of the Dual-Damascene structure is formed without using the CMP method. As shown in FIG. 1A, oxygen ions are implanted from an upper surface under the condition that the oxygen ions reach a position a little deeper than the thickness t1 of the copper film 11 on the SiO.sub.2 layer 2. Due to the foregoing, as shown in FIG. 1B, the copper film 11 on the SiO.sub.2 layer 2 and the copper films on the upper portions of the first wiring section 18 and the second wiring section 19 are oxidized, and the oxidized layer 13 is formed. Since the dielectric constant of copper oxide is high, the first wiring section 18 and the second wiring section 19 are insulated from each other. Therefore, it is possible to obtain a highly reliable wiring structure easily.

Growing community of inventors

Kyoto, Japan

Etsuyoshi Kobori