Matsushita Electric Industrial Co., Ltd.

Etsuya Takeda

Seiichi Nagata

Yutaka Nanno

Takao Kawaguchi

Hiroshi Maeda

Ichiro Yamashita

Yoshihiro Gohara

Shinji Fujiwara

Sadayoshi Hotta

Eiichiro Tanaka

Katsumi Adachi

Yutaka Miyata

Tetsuya Kawamura

Tatsuhiko Tamura

Noriko Okawa

Takashi Tsukada

Seiichiro Hori

The structure of pixel electrode constituting a pixel element of a liquid-crystal display device employing the capacitively coupling driving method and driving method for the device are described. The field of view angle at the main viewing direction is increased and the grayscale graduation reversal is eliminated through a procedure of sequentially increasing or decreasing, at each scanning busline, the value of compensating potential at a time when a potential being applied to the gate terminal of the switching element shifts from ON potential to OFF potential, to be applied on an adjacent scanning busline to which the storage capacitance is formed, by setting each of the values of storage capacitance ratio and parasitic capacitance ratio different through making each of the values of storage capacitance and parasitic capacitance formed between the plural pixel electrodes and respective switching elements within one pixel element different to each other.

Liquid-crystal display device and driving method thereof

A method of driving a display device having a matrix of display material elements includes transmitting a picture signal voltage to each picture element electrode during an ON period of a respective switching element, applying a first modulation signal to a first wire during an OFF period of the switching elements associated with the first wire, and applying a second modulation signal to counter electrodes associated with the first wire during the OFF period of the switching elements associated with the first wire. Each picture element electrode of a plurality of the display material elements is connected to the first wire through a respective capacitance.

Method of driving an image display device by driving display materials

A plurality of ON signal voltages are applied to a thin film transistor (TFT) within one field period, thereby transmitting an image signal voltage to a pixel electrode, two types of modulation signals are alternately supplied to a first wiring (17) at every field during an OFF period of the thin film transistor so that the potential of the pixel electrode is changed, and the change of the potential is superimposed on and/or offset by an image signal voltage so as to apply a resultant voltage to a display material to be driven. Before the termination of a first ON period of the plurality of ON signal voltages applied to the thin film transistor, a part of the potential of the modulation signal is varied.

Driving method for a display device

A method of driving a display unit having matrix-arranged pixel electrodes each connected via a capacitor to a first line, each pixel electrode being connected to a switching element which is electrically connected to an image signal line and scan signal line, and display material held between the pixel electrode and opposing electrode and being AC driven, wherein an image signal voltage is transmitted to the pixel electrode during an on-period of the switching element, and a modulating signal with its voltage reversing alternately for each field is applied to the first line during an off-period of the switching element, thereby changing the potential of the pixel electrode so that the changed potential is superposed upon, or cancelled out from, the image signal voltage, the resultant voltage being applied across the display material.

Method of driving display unit

An electrostatic breakdown protection circuit protects an internal circuit from positive and negative high voltages. One form of the protection circuit includes a hot line connected to the internal circuit for supplying a data signal, a bypass line, a first diode connected in a first direction between the hot line and the bypass line, and a second diode connected in a second direction between the hot line and the bypass line in parallel to the first diode.

Electrostatic breakdown protection circuit

A driving method of a display apparatus for AC driving display materials such as liquid display and so on to the picture display by the use of an active matrix with switching elements of thin film transistors so that the output signal voltage of the signal driving circuit of the active matrix display apparatus is considerably reduced and the consumption power of the same driving circuit handling the analog signal may be reduced.

Capacitively coupled driving method for TFT-LCD to compensate for

In a method of electrically testing an active matrix substrate having a plurality of semiconductor switching devices, a row group of a plurality of parallel conductors and a column group of a plurality of parallel conductors, a gate electrode of each of the semiconductor switching devices being connected to one of the conductors of the row group, and a source electrode of each of the semiconductor switching devices being connected to one of the conductors of the column group, there are provided the steps of short-circuiting the conductors of the row group at both ends thereof; short-circuiting the conductors of the column group at both ends thereof; applying a predetermined voltage between the row and column groups of the conductors; and measuring a current flowing from the row group to the column group of the conductors. Moreover, in determining whether the active matrix substrate is defective, there is also provided the step of determining whether the following formula is satisfied or not:

Method of electrically testing active matrix substrate

In an electro-optical effect display apparatus, a number of pairs of two parallel and closely disposed scanning bus-lines (21-21, 21-21, . . . ) are disposed on a substrate with a predetermined interval therebetween, and a first electrode bus-line (25) is disposed between each other neighboring two pairs of the scanning bus-lines (21-21 and 21-21). Then respective storage capacitors (26) belonging to two display elements (24, 24), each other neighboring with respect to the first electrode bus-line (25), are connected commonly to the first electrode bus-line (25), thereby utilizing a single first electrode bus-line (25) commonly for two storage capacitors (26, 26) which are disposed substantially symmetrically to the first electrode bus-line (25); and thus, the number of bus-lines can be reduced, and consequently, the area of the display element increases.

Display apparatus

A display device includes; a first group of bus lines for transmitting a display signal; a second group of bus lines for transmitting a scan signal and a display unit formed at an intersecting point between the first bus line and the second bus line. The first group and the second group of bus lines are formed in a matrix. The display device further includes switching elements which are selectively opened or closed, the switching elements being provided between the bus lines in the first group or in the second group. Accordingly, even when one of the bus lines is broken, a signal can be supplied from the other bus line to the broken bus line through this switching element.

Display device and a display method

A method of production of active matrix display substrates using thin film transistors and more particularly to a method for production of substrates for liquid-crystal display use. The active matrix substrate using the thin film transistor is produced by the mask processes of smaller number. The process of the present invention can reduce the number of the masks, by one, of the active matrix substrate using the inverted staggered thin film transistor which requires the masks from five levels to six levels. Further improvements reduce the number of the masks to four levels from three levels, thus contributing greatly towards lower cost, improved yield.

Method for production of thin film transistor array substrates

A photoconductor which comprises, on a conductive substrate, a photoconductive layer of amorphous silicon hydride to which a first impurity consisting essentially of an element of Group Va or Group VIa of the Periodic Table is added. The contents of the first impurity and hydrogen in the amorphous silicon hydride layer vary in section from one side toward the other side of said layer.

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Suita, Japan

Etsuya Takeda