Mitsubishi Denki Kabushiki Kaisha

Etsushi Adachi

Hiroshi Adachi

Shigeru Harada

Hiroyuki Nishimura

Osamu Hayashi

Shigeyuki Yamamoto

Kimio Hagi

Shintaro Minami

Kazuo Okahashi

Hiroshi Mochizuki

Toru Tajima

Hirozoh Kanegae

Yoshiko Aiba

Noriaki Fujiki

Kazuhito Matsukawa

Hiroshi Tobimatsu

Masanori Obata

Wataru Imanishi

Takemi Endoh

Takeshi Sugano

Chikayuki Nakamura

Akira Ohhisa

Hisoshi Adachi

Tooru Tazima

A getter film is formed on an inner surface of a funnel portion of a cathode ray tube, and an inner conductor of the cathode ray tube is heated by a heating unit. According to this heating, the gas which is physically adsorbed by the inner conductor of the cathode ray tube other than the getter film is discharged and then chemically adsorbed again by the getter film, whereby a degree of vacuum in the cathode ray tube can be increased.

Cathode ray tube manufacturing method and cathode ray tube manufacturing system

In a semiconductor device and a method of fabrication thereof, a resin film forms an interlayer film of the semiconductor device having a multilayer interconnection structure, and is formed by only one coating using coating liquid containing silicone ladder polymers represented by the chemical formula: (HO).sub.2 (R.sub.2 Si.sub.2 O.sub.3).sub.n H.sub.2. As a result, it is possible to improve long-term reliability of electric characteristics or the like, and simplify a process.

Semiconductor device whose flattening resin film component has a

Method of making a semiconductor device

Semiconductor device having a multilayer interconnection structure

A semiconductor device having a stress-buffering film which is effective in buffering the stress caused by a molding resin during sealing, the stress-buffering film being made of a silicone ladder resin represented by formula (I) ##STR1## wherein each end group R may be the same or different and represents a hydrogen atom or an alkyl group, each side chain R' may be the same or different and represents a cyclohexyl group, a lower alkyl group, or a photopolymerizable unsaturated group, and n is an integer of 10 or larger.

Semiconductor device comprising a semiconductor substrate, an element

Disclosed herein is a semiconductor device having a multilayer interconnection structure, which is provided with a plurality of via holes having constant diameters. Patterns of a first interconnection layer are provided on a semiconductor substrate. An interlayer insulating film is provided over the semiconductor substrate, to cover the patterns of the first interconnection layer. A silicon ladder resin film is applied onto the surface of the interlayer insulating film, to flatten the same. First and second via holes are provided through the silicon ladder resin film and the interlayer insulating film, to expose first and second coupling portions provided on the surfaces of the patterns of the first interconnection layer. A second interconnection layer is provided over the semiconductor substrate, to be connected with the first and second coupling portions through the first and second via holes respectively.

Semiconductor device including silicon ladder resin layer

The present invention is mainly characterized by providing an even surface of an interlayer insulating film for insulating and isolating an upper interconnection and a lower interconnection from each other. A lower interconnection layer is provided on a semiconductor substrate, having a pattern of stepped portions. A silicon type insulating film is provided on the semiconductor substrate so as to cover the lower interconnection layer. A silicon ladder resin film is filled in recessed portions of the surface of the silicon type insulating film for making even the surface of the silicon type insulating film. An upper interconnection layer electrically connected to the lower interconnection layer through a via hole is provided on the silicon type insulating film. The silicon ladder resin film has the structural formula: ##STR1## where R.sub.1 is at least one of a phenyl group and a lower alkyl group, R.sub.2 is at least one of a hydrogen atom and a lower alkyl group, and n is an integer of 20 to 1000.

Semiconductor device and manufacturing method thereof

A semiconductor device sealed with mold resin is disclosed. The device includes a semiconductor substrate having a main surface and an element formed on the main surface of the semiconductor substrate. A stress buffering film for protecting at least the element from stress of the mold resin is provided on the semiconductor substrate so as to cover at least the element. The entire semiconductor device is covered and sealed with mold resin. The stress buffering film is formed of organo-silicone ladder polymer having a hydroxyl group at its end. In the semiconductor device, water does not get into an interface of the stress buffering film and the underlying substrate, resulting in an enhancement of the moisture resistance of the semiconductor device.

Semiconductor device sealed with mold resin

Disclosed herein is a silicone ladder polymer coating composition containing silicone ladder polymer which is expressed in the following general formula: ##STR1## where R.sub.1 represents the same or different types of phenyl groups or lower alkyl groups, R.sub.2 represents the same or different types of hydrogen atoms or lower alkyl groups, and n represents an integer of 20 to 1000, an aromatic organic solvent which is so added that solid matter occupies 5 to 30 percent by weight, and a silane coupling agent of 150 to 3000 p.p.m. with respect to the polymer.

Silicone ladder polymer coating composition

The disclosed is a method of manufacturing a semiconductor device sealed with molding resin. An aluminum interconnection including an aluminum electrode pad is formed on a semiconductor substrate having an element. A silicone ladder polymer expressed by the following general formula is formed on the semiconductor substrate to cover the element. The silicone ladder polymer film is selectively etched by an aromatic organic solvent to expose the surface of the aluminum electrode pad. The temperature of the silicone ladder polymer film is elevated at a temperature elevating rate of 20.degree. C./min or more, and then, the silicone ladder polymer film is cooled at a cooling rate of 20.degree. C./min or more to form a cured stress buffering protective film for buffering a stress applied to the element. ##STR1## (in the formula, n is an integer which makes the weight-average molecular weight be in the range of 100,000 to 200,000.)

Method of manufacturing a semiconductor device sealed with molding resin

A method for transferring patterns on a silicone ladder type resin, which comprises: applying onto a substrate a silicone ladder type resin to be represented by the following general formula (I) ##STR1## (where: R.sub.1 denotes a phenyl group or a lower alkyl group, and two R.sub.1 's may be the same or different kinds; R.sub.2 denotes hydrogen atom or a lower alkyl group, and four R.sub.2 's may be the same or different kinds; and n represents an integer of from 5 to 1,000); drying the thus applied resin layer; thereafter applying onto the resin layer a cresol novolac type positive photo-resist; forming a predetermined pattern in the photo-resist layer; subjecting the photo-resist layer to pretreatment; and finally etching the silicone ladder type resin. An etching liquid for etching a silicone ladder type resin, which comprises an aromatic type solvent.

Method for transferring patterns on silicone ladder type resin and

High purity phenyl silicone ladder polymer, and a method for producing such polymer, suitable for use as the protective film, the interlayer insulating film, etc. in the fabrication of semiconductor elements, which polymer contains therein 1 ppm or below of each of sodium, potassium, iron, copper, lead and chlorine, and 1 ppb or below of each of uranium and thorium, and which is represented by the following general formula (I): ##STR1## (where: R.sub.1 to R.sub.4 denote respectively hydrogen or a lower alkyl group; n is an integer of from 8 to 1,000); or the following general formula (II): ##STR2## (where: n is an integer of from 8 to 1,600).

High purity phenyl silicone ladder polymer and method for producing the

A material for forming a high purity thin film which includes a silicone ladder polymer dissolved in an organic solvent is applied to a substrate to form a thin film thereon. The thin film is then heated, thereby removing the solvent and simultaneously curing the thin film. Subsequently, the cured thin film is exposed to an oxygen plasma to form a high purity SiO.sub.2 thin film on the substrate. Although the method consists of simple processes and employs low treatment temperatures, it is capable of forming a high purity SiO.sub.2 thin film which exhibits excellent step coverage and high dielectric breakdown strength.

Method of forming high purity SiO.sub.2 thin film

A stress relaxation protective layer made of a silicone material is formed on a coating covering a circuit disposed on a substrate of a semiconductor device, and a predetermined depth of the surface of the stress relaxation protective layer is modified. A resist is formed on the thus-modified surface of the stress relaxation protective layer, and the thus-formed resist is patterned so that the resist in a predetermined region is removed. The stress relaxation protective layer in the region from which the above-described resist has been removed is removed by etching, and the remaining resist is removed. Next, the coating layer in the region from which the stress relaxation protective layer has been removed is removed by etching with the remaining stress relaxation protective layer used as a mask so that the circuit is exposed. The manufacturing process for semiconductor devices can be significantly simplified since the resist patterning needs to be performed only once and the resist removal can be performed by a dry treatment.

Growing community of inventors

Hyogo, Japan

Etsushi Adachi