Hitachi, Ltd.

Opnext Japan, Inc.

Etsuko Nomoto

Kouji Nakahara

Shinichi Saito

Tsukuru Ohtoshi

Yuko Tsuchiya

Makoto Takahashi

Hitoshi Nakamura

Toshiki Sugawara

Masashi Kiguchi

Shinji Tsuji

Katsuya Oda

Shigehisa Tanaka

Yuji Suwa

Takeshi Kikawa

Makoto Shimaoka

Kazuki Tani

Tadashi Okumura

Satoko Hinomizu

Toru Yasumura

A research and development support system includes: one or more databases that store a plurality of types of data and information related to research and development, and an administrative system that accesses the one or more databases to perform information processing. The one or more databases stores research and development-related information as information related to research and development conducted by a researcher, device-related information as information related to devices used for research and development, and usage history information as information on history of the device being used by the researcher. The administrative system is configured to generate and outputting information that supports research and development on the basis of the usage history information, the device-related information, and the research and development-related information.

Research and development support system

The material development assistance system includes a first control unit giving, based on input information inputted as the prototype plan of the material and a keyword configuring a keyword tree stored in a storage unit, a prototype ID for identifying the prototype plan, a second control unit associating the keyword corresponding to the input information given the prototype ID with the index of the input information and accumulating the associated index in the storage unit as a tree structure for each classification group, a third control unit determining whether or not the index for the classification group accumulated in the storage unit and the input information are in a predetermined relation and when determining that the index and the input information are in the predetermined relation, reading a past prototype plan using the index from the storage unit, and a fourth control unit outputting a new prototype plan.

Material development assistance system and material development assistance method

Provided is an element structure whereby it is possible to produce a silicon-germanium light-emitting element enclosing an injected carrier within a light-emitting region. Also provided is a method of manufacturing the structure. Between the light-emitting region and an electrode there is produced a narrow passage for the carrier, specifically, a one-dimensional or two-dimensional quantum confinement region. A band gap opens up in this section due to the quantum confinement, thereby forming an energy barrier for both electrons and positive holes, and affording an effect analogous to a double hetero structure in an ordinary Group III-V semiconductor laser. Because no chemical elements other than those used in ordinary silicon processes are employed, the element can be manufactured inexpensively, simply by controlling the shape of the element.

Silicon-germanium light-emitting element

In order to provide a highly reliable silicon-germanium semiconductor optical element of high luminous efficiency or of low power consumption that can reduce or prevent the occurrence of dislocations or crystal defects on the interface between a light emitting layer or a light absorption layer and a cladding layer, in a silicon-germanium semiconductor optical element, a germanium protective layerof non-light emission is disposed between a germanium light emitting layer or the light absorption layerand a cladding layerdisposed above a substrate. The germanium protective layerhas the electrical conductivity different from electrical conductivity of the germanium light emitting layer or the light absorption layer

Semiconductor optical element

The object of the invention included in the present application is to automatically prevent the deterioration of the image even when the image quality of the projected image is deteriorated due to the replacement of the light source or the like. The following light beam scanning image projection apparatus is one means for achieving the object. In the light beam scanning image projection apparatus including a plurality of light sources which emit the light beams of respectively different wavelengths, a driving section which modulates the intensity of each light beam in accordance with the image signal, the light axis alignment means which aligns the light axes of each light beam, and scanning means which scans the light beams, the light axis alignment means includes: a plurality of optical elements; and an adjusting section which adjusts at least one of a position and a gradient of at least one of the optical elements, and the light beam scanning image projection apparatus further includes: detecting means which detects a shift between a spot center of each light beam and a center reference point; and position correction means which controls the adjusting section based on a detection result in the detecting means to adjust at least one of the position and the gradient of at least one of the optical elements of the light axis alignment means, thereby aligning the light axes of each light beam.

Light beam scanning image projection apparatus

A living body measuring instrument having a sub-mount on which plural light-emitting devices oscillating at different wavelengths are mounted in proximity, one optical output monitoring device that detects the optical outputs of these light-emitting devices and a light source mounted on the same heat sink which are housed in one can-package, a light-receiving device that detects a signal from a living body, and a circuit that separates the optical output signals from the light-emitting devices, wherein at least one light-emitting device has a light-emitting layer including a InGaAsPquantum well layer and a barrier layer on a GaAs substrate, the strain &#x3b5; satisfies 0.4%&#x2266;&#x3b5;&#x2266;1.4%, wherein y in the composition satisfies 0.10&#x2266;y&#x2266;0.45, and the wavelength of the emitted light is from 700 nm to 760 nm.

Optical measurement instrument for living body semiconductor laser installation for living body light measuring device

A semiconductor laser device that can be operated at high power and that has a structure which can suppress kink, reduce loss and stabilize the direction of polarization simultaneously, and in which an optical pattern decreases monotonously as receding from an active layer and the crystal composition can be easily controlled. A plurality of layers of high refractive index different in the composition from that of the cladding layer are introduced being dispersed over a range wider than the spot size for directing light closer to the lower cladding layer of the semiconductor laser and stabilizing the direction of polarization. The electric field intensity is decreased monotonously as receding from the active layer for the optical pattern.

Semiconductor laser diode

Laser diodes containing aluminum at high concentration in an active layer have been usually suffered from remarkable facet deterioration along with laser driving operation and it has been difficult for the laser diodes to attain high reliability. An aluminum oxide film lacking in oxygen is formed adjacent to the semiconductor on an optical resonator facet, by which facet deterioration can be minimized and, accordingly, the laser diode can be operated with no facet deterioration at high temperature for long time and a laser diode of high reliability can be manufactured at a reduced cost.

Laser diode and manufacturing method thereof

The present invention provides a highly reliable ridge-waveguide semiconductor laser diode and an optical module. The p-side electrode of the ridge-waveguide laser diode has a first conductor layer region and a second conductor layer region formed on the first conductor layer region. At least one of facets of the second conductor layer region is recessed inward from a reflection facet. Thus, the ridge-waveguide semiconductor laser diode has a structure in which strain which is caused by the electrode stress to be applied on the diode facet is reduced and the saturable absorption does not occur. The ridge-waveguide semiconductor laser diode thus obtained is highly reliable, and the optical module using the same is remarkably high in reliability.

Growing community of inventors

Sagamihara, Japan

Etsuko Nomoto