Semiconductor Energy Laboratory Co., Ltd.

Etsuko Kamata

Daisuke Matsubayashi

Yutaka Shionoiri

Shuhei Nagatsuka

Shinpei Matsuda

Daigo Ito

Hiromi Sawai

Kazuki Tanemura

Yasutaka Suzuki

A semiconductor device with a high threshold voltage is provided. A first conductor positioned over a substrate, a first insulator positioned over the first conductor, a first oxide positioned in contact with the top surface of the first insulator, a second insulator positioned in contact with the top surface of the first oxide, a second oxide positioned over the second insulator, a third insulator positioned over the second oxide, and a second conductor positioned over the third insulator are included. A mixed layer is formed between the first insulator and the first oxide. The mixed layer contains at least one of atoms contained in the first insulator and at least one of atoms contained in the first oxide. The mixed layer has fixed negative charge.

Semiconductor device having oxide containing gallium indium and zinc

A highly reliable semiconductor device capable of retaining data for a long period is provided. The transistor includes a first gate electrode, a first gate insulator over the first gate electrode, a first oxide and a second oxide over the first gate insulator, a first conductor over the first oxide, a second conductor over the second oxide, a third oxide covering the first gate insulator, the first oxide, the first conductor, the second oxide, and the second conductor, a second gate insulator over the third oxide, and a second gate electrode over the second gate insulator. An end portion of the second gate electrode is positioned between an end portion of the first conductor and an end portion of the second conductor in a channel length direction.

Transistor, semiconductor device, and electronic device

Growing community of inventors

Kanagawa, Japan

Etsuko Kamata