Stmicroelectronics S.a.

Stmicroelectronics (crolles 2) Sas

Etienne Robilliart

Didier Dutartre

Benoit Froment

Philippe Delpech

The invention concerns a conducting layer having a thickness of between 1 and 5 atoms, an insulated gate being formed over a part of the conducting layer.

MIM transistor

A capacitor integrated on a silicon substrate includes a first electrode made of highly doped polysilicon, a thin silicon oxide layer, a second electrode made of polysilicon and a silicide layer covering the second electrode. The second electrode has a high dopant concentration at its interface with the silicon oxide layer and a low or medium dopant concentration at its interface with the silicide layer.

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Lumbin, France

Etienne Robilliart