Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Centre National De La Recherche Scientifique

Etat Francais

Etienne Quesnel

Benoit Racine

Jean Dijon

François Templier

Patrick Chaton

Gilles Grand

Francis Maury

Carole Pernel

Pierre Blandin

Gilles Le Blevennec

Marianne Consonni

Pierre Barritault

Jean-Yves Robic

Bernard Rolland

Aurélien Suhm

Laurent Bedel

Cyril Cayron

Michel Jouve

Stephane Altazin

Jeremy Bilde

Aurelien Suhm

Stéphane Altazin

Jérémy Bilde

Sylvia Meunier

A light-emitting device includes a first electrode reflecting in a spectral range, a second electrode, and a light-emitting layer extending between the first and second electrodes and configured to emit electromagnetic radiation in the spectral range, the electromagnetic radiation emitted by the light-emitting layer being circularly polarized in a first polarization direction, the electromagnetic radiation reflected by the first electrode being circularly polarized in a second polarization direction, opposite to the first polarization direction. The second electrode is structured so as to define opaque patterns in the spectral range, arranged to block transmission of the circularly polarized electromagnetic radiation in the first polarization direction, and a spacing zone spacing apart the opaque patterns from one another and transparent in the spectral range so as to allow transmission of the circularly polarized electromagnetic radiation in the second polarization direction.

Light-emitting device

A method for manufacturing an optoelectronic device including an array of diodes and an array of colour conversion portions includes providing the array of diodes, and the upper electrode layers; depositing a dielectric layer having a substantially zero surface potential; applying a potential difference between an electrode and the first upper electrode layers, resulting in the formation of first patterns with non-zero surface potential in the dielectric layer; and producing the first colour conversion portions, by contacting the dielectric layer with a colloidal solution containing first photoluminescent particles.

Method for manufacturing a colour-conversion optoelectronic device, including a step of polarising an electret layer in a localised manner by means of the upper electrodes of the diodes

Device () for characterizing a substance () capable of emitting a photoluminescence radiation (Rp) in a first spectral range, the device () comprising:

Compact device for characterizing a photoluminescent substance

A method for manufacturing an optoelectronic device including an array of diodes and photoluminescent pads arranged opposite at least one diode, including making an electret layer over the array of diodes, by localized polarization or depolarization, optically, so as to form surface potential patterns; and making the photoluminescent pads, by contact of the electret layer with a colloidal solution containing photoluminescent particles, which are then deposited over the upper face of the electret layer opposite the predefined surface potential patterns, thereby forming the photoluminescent pads.

Method for manufacturing a colour conversion optoelectronic device, including a step of optically forming surface potential patterns in an electret layer

A device for exciting objects with an excitation radiation and for detecting a photoluminescence radiation emitted by the objects after the absorption of the excitation radiation. The device includes a wall in contact with the objects, an organic light-emitting diode for emitting the excitation radiation and transparent to the photoluminescence radiation, an optical resonator tuned to the wavelength of the photoluminescence radiation and located on the side of the organic light-emitting diode opposite to the wall, and at least one sensor of the photoluminescence radiation arranged on the side of the optical resonator opposite to the organic light-emitting diode.

Excitation and photoluminescence detection device

A device includes first and second electrodes that are at least partially transparent in a spectral domain; an electroluminescent layer that lies between the first and second electrodes suitable for emitting electromagnetic radiation in the spectral domain, the electromagnetic radiation being circularly polarized in a first polarization direction; a structured substrate, the first electrode lying between the structured substrate and the electroluminescent layer, the structured substrate including features that are reflective in the spectral domain, and that possess a hollow geometric shape configured so that electromagnetic radiation that passes through the first electrode is reflected from the reflective features while preserving the first polarization direction, a filler material that is transparent in the spectral domain and that is arranged to fill the reflective features so that the structured substrate has a planar surface.

Electroluminescent device

A method for diffusing metal particles including a composite layer deposited on a substrate, with the composite layer further including at least one dielectric matrix, and where the diffusion of the metal particles towards the substrate is achieved by means of a plasma treatment.

Method for diffusing metal particles within a composite layer

The invention relates to a plasmon resonance optical detection device including a stack of layers comprising:

Optical detection structure for a plasmon resonance sensor

The invention concerns a process for forming an optical component comprising:

Adjustable mask blank structure for an EUV phase-shift mask

An optical device reflecting a range of wavelengths comprised between 10 nm and 20 nm comprises alternate superposed first and second layers. The first layers are made of metal or metallic compound and the second layers are formed by an amorphous silicon compound chosen from a-Si&#x2014;H, a-Si&#x2014;CH, a-Si&#x2014;C, a-Si&#x2014;OH, a-Si&#x2014;F, a-Si&#x2014;FH, a-Si&#x2014;N, a-Si&#x2014;NH, x being comprised between 0.01 and 0.3. The use of second layers of amorphous silicon compound enables the mechanical stresses of the optical device to be stabilized up to at least 200&#xb0; C. The optical device is preferably used as reflector for a lithography mask in the extreme ultraviolet (EUV).

Optical device with enhanced mechanical stability operating in the extreme ultraviolet and lithography mask comprising such a device

Light absorbing coating with high absorption capacity

The invention relates to a multilayer stack of fluoride materials usable in optics and its production process. This stack is constituted by alternating layers of a first, high index, fluoride material such as YF.sub.3 and a second, low index fluoride material such as LiF, able to form together a specific, stable compound such as YLiF.sub.4, so that the interface between two adjacent layers of the stack is at least partly formed from said compound.

Growing community of inventors

Meylan, France

Etienne Quesnel