Commissariat a L'energie Atomique Et Aux Energies Alternatives

Leland Stanford Junior University

Etienne Nowak

Binh Quang Le

Laurent Grenouillet

Elisa Vianello

Subhasish Mitra

Marios Barlas

Fan Tony Wu

Philip Wong

A resistive memory cell may be provided with a first electrode and a second electrode arranged on either side of a dielectric layer and facing an interface between a first region and a second region, The first and second region may have different compositions in terms of doping and/or dielectric constant, so as to confine the zone of reversible creation of a conductive filament at the interface.

Resistive memory with a switching zone between two dielectric regions having different doping and/or dielectric constants

The present disclosure relates to a method of programming resistive memory cells of a resistive memory, the method comprising: applying, by a programming circuit based on a first target resistive state, an initial resistance modification to a first cell of the resistive memory to change its resistance from an initial resistive state to a first new resistance; comparing, by the programming circuit, the first new resistance of the first cell with a resistance range of the first target resistive state and with a target resistance range associated with the first target resistive state; and if it is determined that the first new resistance is outside the resistance range of the target resistive state and inside the target resistance range, applying by the programming circuit one or more further resistance modifications to the first cell to increase or decrease its resistance.

Circuit and method for programming resistive memory cells

Growing community of inventors

Grenoble, France

Etienne Nowak