Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Soitec

Etienne Navarro

Lamine Benaissa

Yann Lamy

Yves-Matthieu Le Vaillant

A semiconductor on insulator type substrate, comprising at least: in which the trap rich layer comprises at least one first region and at least one second region adjacent to each other in the plane of the trap rich layer, the material of the at least one first region being in an at least partially recrystallized state and having an electrical resistivity less than that of the material in the at least one second region.

SOI substrate compatible with the RFSOI and FDSOI technologies

This process comprises steps of: a) providing a first substrate comprising the active layer made of a first material of Young's modulus Eand of thickness h; b) providing a second substrate made of a second material of Young's modulus Eand of thickness h; c) bending the first substrate and the second substrate such that they each have a curved shape of a radius of curvature R; d) joining the second substrate to the active layer such that the second substrate closely follows the shape of the first substrate; and e) re-establishing the initial at-rest shape of the second substrate, the process being noteworthy in that the second material of the second substrate is a flexible material respecting the relationship E/E&#x3c;10, in that the thickness of the second substrate respects the relationship h/h&#x2267;10, and in that the radius of curvature respects the relationship 

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Grenoble, France

Etienne Navarro