Centre National De La Recherche Scientifique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Université De Nantes

Etienne Eustache

Jean-Michel Hartmann

Thierry Brousse

Nathalie Rolland

Franck Bassani

Bassem Salem

Christophe Lethien

Mohamed-Aymen Mahjoub

Pascal Tilmant

A method for the nanoscale etching of a layer of GeSnon a carrier for a FET transistor, x being the concentration of tin in the GeSn alloy, the etching method includes a step of plasma-etching the layer of GeSnusing a mixture comprising dichlorine (Cl) and dinitrogen (N) and under an etching pressure lower than or equal to 50 mTorr, preferably lower than or equal to 10 mTorr. A method for producing a conduction channel on a carrier for a FET transistor, comprising a step of forming a layer of GeSnon the carrier, the layer being produced by epitaxial growth, and a step of etching the layer of GeSnaccording to the etching method. A conduction channel made of GeSnfor a FET transistor, the channel being obtained according to the production method, and a FET transistor comprising a plurality of conduction channels made of GeSn.

Method for the nanoscale etching of a germanium-tin alloy (GeSn) for a FET transistor

A microstructured substrate includes a plurality of at least one elementary microstructure. An electrical storage device, and more particularly an all-solid-state battery, can include the microstructured substrate.

Microstructured substrate

Growing community of inventors

Lille, France

Etienne Eustache