Electricite De France

Ecole Polytechnique

Centre National De La Recherche Scientifique-Cnrs

Totalenergies Se

Institut Photovoltaique D'ile De France (Ipvf)

Centre National De La Recherche Scientifique

L'air Liquide,societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude

Totalenergies Onetech

Institut Photovoltaique D'ile-De-France

Etienne Drahi

Philip Schulz

Florian Hilt

Sébastien Jutteau

Pierre-Philippe Grand

Cédric Guerard

A method for optimizing an existing generator system based on photovoltaic cells and provided with an existing photovoltaic panel or a group of existing photovoltaic panels, each panel having a first plurality of cells of a first type interconnected in series or in series/in parallel. The method includes: determining an operating voltage of the panel(s); producing additional panel module(s) having a second plurality of thin-film cells of a second type and having a different band gap width than the cells of the panel(s), the additional module(s) being configured to supply an operating voltage equal, within ±10%, to the voltage of the panel(s); positioning the additional module to overlap on or under the panel or one of the panel(s), the module being connected in parallel to the panel(s), or positioning several additional modules to overlap on or under several panels, the several modules being connected in parallel to panels.

Method and device for optimising photovoltaic panels and photovoltaic panels optimised using this method

The present invention refers to a three terminal tandem solar generation unit () comprising: &#x2014;a first absorbing layer () made of a perovskite type compound, &#x2014;a second absorbing layer ('), &#x2014;a first and a second interdigitated front contacts () arranged on the front side of the first absorbing layer (), the first front contact () having a first polarity and the second front contact () having a second polarity, &#x2014;a back contact (&#x2032;) having the first or the second polarity arranged on the back side of the second absorbing layer (&#x2032;), &#x2014;an interface layer (&#x2032;) arranged between the first () and the second (&#x2032;) absorbing layers comprising a first semiconductor sub-layer (&#x2032;) doped according to the first polarity and a second sub-layer (&#x2032;) doped according to the second polarity and configured for enabling carriers associated with a polarity different than the polarity of the back contact (&#x2032;) to be transferred from the second absorbing layer (&#x2032;) to the first absorbing layer () to be collected by the front contact () having a polarity different than the polarity of the back contact (&#x2032;).

Three terminal tandem solar generation unit

Growing community of inventors

Paris, France

Etienne Drahi