Taiwan Semiconductor Manufacturing Comp. Ltd.

Ethan Hsiao

Chung-Liang Cheng

Chin-Szu Lee

Cheng-Yi Wu

Li-Hsuan Chu

Alan Tu

C W Chiu

Chih-Wei Hsieh

Hong-Ying Lin

Hui-Lin Sung

Sz-Yuan Hung

Sheng-Yung Lo

Ru-Gun Liu

Chih-Ming Lai

Cheng-Chi Chuang

Yi-Hsiung Lin

Hsin-Ping Chen

Chien Wen Lai

A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.

Contact structure

A method includes providing a substrate comprising a material layer and a hard mask layer; patterning the hard mask layer to form hard mask lines; forming a spacer layer over the substrate, including over the hard mask lines, resulting in trenches defined by the spacer layer, wherein the trenches track the hard mask lines; forming a antireflective layer over the spacer layer, including over the trenches; forming an L-shaped opening in the antireflective layer, thereby exposing at least two of the trenches; filling the L-shaped opening with a fill material; etching the spacer layer to expose the hard mask lines; removing the hard mask lines; after removing the hard mask lines, transferring a pattern of the spacer layer and the fill material onto the material layer, resulting in second trenches tracking the pattern; and filling the second trenches with a conductive material.

Methods of forming metal layer structures in semiconductor devices

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Hsin-Chu, Taiwan

Ethan Hsiao