Flusso Limited

Ethan Gardner

Florin Udrea

Syed Zeeshan Ali

Christopher James Rosser

Andrea De Luca

Cerdin Lee

Tim Butler

Jonathan Sean Callan

Jonathan Owen Hardie

Claudio Falco

Cerdin Ching Ching Lee

We disclose herein a fluid sensor for sensing a concentration or composition of a fluid, the sensor comprising a semiconductor substrate comprising a first etched portion, a dielectric region located on the semiconductor substrate, wherein the dielectric region comprises a first dielectric membrane located over the first etched portion of the semiconductor substrate, a heating element located within the first dielectric membrane, and a first temperature sensing element spatially separated from the heating element. The fluid sensor further comprises a second temperature sensing element within the dielectric membrane, or the heating element may be further configured to operate as a second temperature sensing element. The separation between the second temperature sensing element and the first temperature sensing element introduces a temperature difference between the second temperature sensing element and the first temperature sensing element, such that a differential signal between the first temperature sensing element and the second temperature sensing element is indicative of the concentration or composition of the fluid based on a thermal conductivity of the fluid.

Thermal fluid sensor

We disclose herein a sensing device comprising a semiconductor substrate having a first etched portion, a dielectric layer located on or over the semiconductor substrate, wherein the dielectric layer comprises a first dielectric membrane located adjacent to the first etched portion of the semiconductor substrate, a pressure sensing element and/or a flow sensing element within the first dielectric membrane, and a first structure configured to reinforce the dielectric membrane. A first portion of the first structure is located within the first dielectric membrane, the first structure has a higher stiffness than the first dielectric membrane, and the first portion of the first structure is located between a perimeter of the dielectric membrane and the pressure sensing element or flow sensing element.

Flow sensor

We disclose herein a flow sensor comprising: a first substrate comprising an etched portion, a dielectric region located on a first side of the first substrate, wherein the dielectric region comprises at least one dielectric membrane located over the etched portion of the first substrate, a sensing element located on or within the dielectric membrane, and a second substrate adjoining a second side of the first substrate. The first side of the first substrate and the second side of the first substrate are opposite sides. The first substrate and the second substrate cooperate to form a sensing channel through the flow sensor.

A fluid sensor for sensing a concentration or composition of a fluid, the sensor comprising: a semiconductor substrate comprising a first etched portion and a second etched portion; a dielectric region located on the semiconductor substrate, wherein the dielectric region comprises a first dielectric membrane located over the first etched portion of the semiconductor substrate, and a second dielectric membrane located over the second etched portion of the semiconductor substrate; two temperature sensing elements on or within the first dielectric membrane and two temperature sensing elements on or within the second dielectric membrane; an output circuit configured to measure a differential signal between the two temperature sensing elements of the first dielectric membrane and the two temperature sensing elements of the second dielectric membrane; wherein the first dielectric membrane is exposed to the fluid and the second dielectric membrane is isolated from the fluid.

Thermal fluid sensor with encapsulated fluid region

There is disclosed herein a flow sensor comprising: a first substrate comprising an etched portion; a dielectric layer located on the first substrate, where the dielectric layer comprises at least one dielectric membrane located over the etched portion of the first substrate; a first heating element and a second heating element located on or within the dielectric membrane; and a controller coupled with the first heating element and the second heating element. The first heating element and the second heating element are arranged to intersect one another within or over an area of the dielectric membrane. The controller is configured to: take a measurement from the second heating element; determine a calibration parameter using the measurement from the second heating element; take a measurement from the first heating element; and determine a flow rate through the flow sensor using the determined calibration parameter and the measurement from the first heating element.

We disclose herein a flow sensor assembly comprising a first substrate, a flow sensor located over the first substrate, a lid located over the flow sensor, a flow inlet channel, and a flow outlet channel. A surface of the flow sensor and a surface of the lid cooperate to form a flow sensing channel between the flow inlet channel and the flow outlet channel, and a surface of the flow sensing channel is substantially flat throughout the length of the flow sensing channel.

Sensor assembly

We disclose herein a flow and thermal conductivity sensor comprising a semiconductor substrate comprising an etched portion, a dielectric region located on the semiconductor substrate, wherein the dielectric region comprises at least one dielectric membrane located over the etched portion of the semiconductor substrate and a heating element located within the dielectric membrane. The dielectric membrane comprises one or more discontinuities located between the heating element and an edge of the dielectric membrane.

Growing community of inventors

Kineton, United Kingdom

Ethan Gardner