Siltronic Ag

Wacker Siltronic Gesellschaft Fur Halbeitermaterialien Mbh

Erwin-Peter Mayer

Wolfgang Siebert

Rainer Winkler

Rupert Krautbauer

Andrej Lenz

Gerhard Huettl

A semiconductor wafer is formed of a substrate wafer of single crystal silicon doped with dopant atoms of the n type or p type, with a front surface and a back surface, contains a layer deposited epitaxially on the front surface of the substrate wafer. The substrate wafer additionally includes an nor pdoped layer, which extends from the front surface of the substrate wafer into the substrate wafer and has a defined thickness. The semiconductor wafer is produced by a process in which dopant atoms of the n type or p type are introduced into the substrate wafer through the front surface of the substrate wafer, the dopant concentration in a layer which extends from the front surface of the substrate wafer into the substrate wafer being increased from the level nor pto the level nor p, and an epitaxial layer is then deposited on this layer.

Semiconductor wafer with an epitaxially deposited layer, and process for producing the semiconductor wafer

A process for the production of an epitaxially coated semiconductor wafer, composed of a substrate wafer of monocrystalline silicon having a front side and a rear side, has at least one layer of semiconductor material which is epitaxially deposited on the front side of the substrate wafer and which is obtained by production of a heavily doped silicon monocrystal by crucible-free zone pulling, production of a substrate wafer having polished front side from the monocrystal and deposition of at least one epitaxial layer of semiconductor material on the front side of the substrate wafer.

Process for the production of an epitaxially coated semiconductor wafer

Growing community of inventors

Burghausen, Germany

Erwin-Peter Mayer