Siemens Aktiengesellschaft

Erwin Knapek

Guy LeFranc

Reinhard Weyl

Helmut Formanek

Fred Fox

Isolde Dietrich

Karl Nachtrieb

Helmut Zerbst

Burkhard Lischke

Ralf Schmid

Johann Otto

Frederik Ponse

Gabrielle Belle

Magdalena Hintermaier

Daniela Bernklau

A clearing frame for a semiconductor component is provided to enable a sufficient positioning of a particle beam. The clearing frame has a higher electrical conductivity than the environment thereof. The clearing frame also enables the determination of the layer resistance of the implantation via the high-frequency loss resistance measurement free from contact and destruction. The clearing frame can be placed at a fixed external DC potential, for example source or drain potential and therefore side gating effects can be avoided.

Conductive clearing frame for a semiconductor component

A method for producing smooth uniform polymethylmethacrylate (PMMA) layers having a thickness of greater than 20 .mu.m. The PMMA layers are produced utilizing a solution of polymethylmethacrylate in an ester of lactic acid. The PMMA layers are particularly suited for micro-structuring techniques which utilize high-energy, ionizing radiation. The PMMA layers exhibit a good adhesion to metallic, semi-conducting and insulating substrates.

Method for producing uniform polymethylmethacrylate layers

An electron-beam-sensitive resist material is provided that includes film having high-polymers and includes dopings. The material is made into a solution that is added to the substrate so that the resist material can be produced on the semiconductive or piezoelectric substrates by drying. The doping additives of the resist material can include: halogens, halogen compounds, peroxides, kaotropic salts and xanthates. The resist material is used for the production of electron-beam-written microstructures with high structural resolution and, in comparison to the known methods, eliminates the error-affected developing process.

Electron-beam-sensitive resist material for microstructures in

A method and apparatus localize weak points within an electrical circuit. The electrical circuit is covered with a liquid crystal and is heated to a temperature just below the clearing point of the liquid crystal. The liquid crystal converts into its unordered condition given a temperature increase and leakage channel within the integrated circuit are completely localized. By irradiating a three-dimensional region, at least one current is induced in the region by generating electron-hole pairs within the electrical circuit, this at least one current causing a temperature increase at at least one weak point of the electrical circuit.

Method and apparatus for localizing weak points within an electrical

A magnetic lens system for corpuscular radiation equipment operating in a vacuum, in particular, an objective lens system for electron microscopes, comprising a superconducting shield housing, in which are arranged, at one end, a single hollow cylindrical superconducting shielding device, wound with a lens coil, and at the other end, in front of the free end face of the shielding device, a vacuum chamber for accommodating an object to be examined, permitting the cavity to be relatively large, and detectors for radiation analysis to be arranged therein so that the lens system is therefore suitable for use in scanning electron microscopes.

Magnetic lens system for corpuscular radiation equipment

A magnetic lens arrangement for corpuscular radiation equipment working under a vacuum, in particular an objective lens for high voltage electron microscopes, which permits having objects to be examined disposed in a vacuum chamber at room temperature, is achieved by an arrangement which includes a vacuum chamber having a lens coil winding, a superconductive shielding device which is of cup-shaped design and encloses the winding, two superconductive shielding cylinders disposed one behind the other with mutual spacing enclosed by the winding, with a vacuum chamber for the object to be examined disposed in front of the open side of the shielding device and the first shielding cylinder.

Growing community of inventors

Unterhaching, Germany

Erwin Knapek