Commissariat a L'energie Atomique

Erwan Dornel

Jean-Charles Barbe

Thomas Ernst

Joël Eymery

Francois De Crecy

François De Crecy

A method of manufacturing at least one nanowire, the nanowire being parallel to its supporting substrate, the method including the formation on the supporting substrate of a structure comprising a bar and two regions, a first end of the bar being secured to one of the two regions and a second end of the bar being secured to the other region, the width of the bar being less than the width of the regions, the subjection of the bar to an annealing under gaseous atmosphere in order to transform the bar into a nanowire, the annealing being carried out under conditions allowing control of the sizing of the neck produced during the formation of the nanowire.

Method of manufacturing nanowires parallel to the supporting substrate

The invention relates to a method for forming microcavities () of different depths in a layer () based on at least an amorphous or monocrystalline material, comprising at least the following steps in which: at least one shaft and/or trench is formed in the layer () so as to extend through one face () thereof, such that two sections of the shaft and/or the trench, in two different planes parallel to the face (), are aligned in relation to one another along an alignment axis forming a non-zero angle with a normal to the plane of said face (); and the layer () is annealed in a hydrogenated atmosphere so as to transform the shaft and/or trench into at least two microcavities ().

Method for forming non-aligned microcavities of different depths

A method for forming a wire in a layer based on a monocrystalline or amorphous material. The method forms two trenches in the layer, crossing through one face of the layer, separated from each other by one portion of the layer, by an etching of the layer on which is arranged an etching mask, and anneals, under hydrogenated atmosphere, the layer, the etching mask being maintained on the layer during the annealing. The depths and widths of the sections of the two trenches, and the width of a section of the portion of the layer, are such that the annealing eliminates a part of the portion of the layer, the two trenches then forming a single trench in which a remaining part of the portion of the layer forms the wire.

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Vern sur Seiche, France

Erwan Dornel