Applied Materials, Inc.

Errol Antonio C Sanchez

Zhiyuan Ye

David K Carlson

Schubert S Chu

Xinyu Bao

Yi-Chiau Huang

Zuoming Zhu

Joseph Michael Ranish

Kartik Bhupendra Shah

Nyi O Myo

Patricia M Liu

Shu-Kwan Danny Lau

Swaminathan T Srinivasan

Satheesh Kuppurao

Xuebin Li

Ala Moradian

Bingxi Sun Wood

Keun-Yong Ban

Michael Patrick Chudzik

Abhishek Dube

Hua Chung

Paul Brillhart

Benjamin Colombeau

Naomi Yoshida

Mehmet Tugrul Samir

Anzhong Chang

Shulin Wang

Shiyu Sun

Theresa Kramer Guarini

Kin Pong Lo

Edric Tong

Patrick M Martin

Marcel E Josephson

James Francis Mack

Koji Nakanishi

Toshiyuki Nakagawa

Xianzhi Tao

Nam Sung Kim

Flora Fong-Song Chang

Bindusagar Marath Sankarathodi

Sung Won Jun

Vanessa Pena

Fareen Adeni Khaja

Michael Robert Rice

Tetsuya Ishikawa

Mark Joseph Saly

Chun Yan

Yihwan Kim

Johanes F Swenberg

Martin A Hilkene

Aihua Chen

Kenric T Choi

Peter Reimer

Richard Omar Collins

Kevin Joseph Bautista

Matthias Bauer

Dennis L Demars

R Suryanarayanan Iyer

John Boland

Surendra Singh Srivastava

Srividya Natarajan

Manjunath Subbanna

Papo Chen

Roisin L Doherty

Palamurali Gajendra

Aaron Muir Hunter

Stephen Moffatt

Gaurav Thareja

Jiping Li

Lori D Washington

Lee Luo

Sean M Seutter

Balasubramanian Ramachandran

Zhepeng Cong

Gregory E Menk

Jeffrey A Tobin

Raymond Hoiman Hung

Yuji Maeda

Karthik Ramanathan

Saurabh Chopra

Douglas Earl Holmgren

Surajit Kumar

Wonseok Lee

Jenny Lin

Vilen K Nestorov

Xiaoliang Jin

Howard Beckford

Sanjeev Tandon

Enle Choo

Preetham Rao

Chen-Ying Wu

Emre Cuvalci

Miao Jin

Marc David Shull

Sohrab Zokaei

Nobuo Tokai

Maxim Shaposhnikov

Randhir P Singh Thakur

Janardhanan Anand Subramony

Harpreet Singh Juneja

Embodiments generally relate to methods for depositing silicon-phosphorous materials, and more specifically, relate to using silicon-phosphorous compounds in vapor deposition processes (e.g., epitaxy, CVD, or ALD) to deposit silicon-phosphorous materials. In one or more embodiments, a method for forming a silicon-phosphorous material on a substrate is provided and includes exposing the substrate to a deposition gas containing one or more silicon-phosphorous compounds during a deposition process and depositing a film containing the silicon-phosphorous material on the substrate. The silicon-phosphorous compound has the chemical formula [(RHSi)—(RHSi)]PHR', where each instance of R and each instance of R′ are independently an alkyl or a halogen, n is 0, 1, or 2; v is 0, 1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2; z is 0, 1, or 2, and where x+y+z=3.

Method for forming silicon-phosphorous materials

An apparatus for controlling temperature profile of a substrate within an epitaxial chamber includes a bottom center pyrometer and a bottom outer pyrometer to respectively measure temperatures at a center location and an outer location of a first surface of a susceptor of an epitaxy chamber, a top center pyrometer and a top outer pyrometer to respectively measure temperatures at a center location and an outer location of a substrate disposed on a second surface of the susceptor opposite the first surface, a first controller to receive signals, from the bottom center pyrometer and the bottom outer pyrometer, and output a feedback signal to a first heating lamp module that heats the first surface based on the measured temperatures of the first surface, and a second controller to receive signals, from the top center pyrometer, the top outer pyrometer, the bottom center pyrometer, and the bottom outer pyrometer, and output a feedback signal to a second heating lamp module that heats the substrate based on the measured temperatures of a substrate and the measured temperatures of the first surface.

Temperature profile measurement and synchronized control on substrate and susceptor in an epitaxy chamber

Embodiments of the present disclosure generally relate to methods and systems for cleaning a surface of a substrate. In an embodiment, a method of processing a substrate is provided. The method includes introducing a substrate to a processing volume of a processing chamber by positioning the substrate on a substrate support. The method further includes flowing a first process gas into the processing volume, the first process gas comprising HF, flowing a second process gas into the processing volume, the second process gas comprising pyridine, pyrrole, aniline, or a combination thereof, and exposing the substrate to the first process gas and the second process gas to remove oxide from the substrate under oxide removal conditions. In another embodiment, a system is provided that includes a processing chamber to process a substrate, and a controller to cause a processing method to be performed in the processing chamber.

Methods and systems for cleaning high aspect ratio structures

Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

Multi zone spot heating in EPI

Embodiments described herein include processes and apparatuses relate to epitaxial deposition. A method for epitaxially depositing a material is provided and includes positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, where the process volume contains upper and lower chamber regions. The method includes flowing a process gas containing one or more chemical precursors from an upper gas inlet on a first side of the chamber body, across the substrate, and to an upper gas outlet on a second side of the chamber body, flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body, and maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region.

Method for epitaxially depositing a material on a substrate by flowing a process gas across the substrate from an upper gas inlet to an upper gas outlet and flowing a purge gas from a lower gas inlet to a lower gas outlet

The present disclosure generally relates to gas inject apparatus for a process chamber for processing of semiconductor substrates. The gas inject apparatus include one or more gas injectors which are configured to be coupled to the process chamber. Each of the gas injectors are configured to receive a process gas and distribute the process gas across one or more gas outlets. The gas injectors include a plurality of pathways, a fin array, and a baffle array. The gas injectors are individually heated. A gas mixture assembly is also utilized to control the concentration of process gases flown into a process volume from each of the gas injectors. The gas mixture assembly enables the concentration as well as the flow rate of the process gases to be controlled.

Gas injector for epitaxy and CVD chamber

A method of fabricating a semiconductor device includes forming an interconnect structure over a front side of a sensor substrate, thinning the sensor substrate from a back side of the sensor substrate, etching trenches into the sensor substrate, pre-cleaning an exposed surface of the sensor substrate, epitaxially growing a charge layer directly on the pre-cleaned exposed surface of the sensor substrate, and forming isolation structures within the etched trenches.

Structure and material engineering methods for optoelectronic devices signal to noise ratio enhancement

Embodiments disclosed herein are directed to forming MOSFET devices. In particular, one or more pre-silicide treatments are performed on a substrate prior to the deposition of the metal-silicide layer to improve the density and performance of the metal-silicide layer in the MOSFETs. The metal-silicide formation formed with the pre-silicide treatment(s) can occur before or after the formation of metal gates during MOSFET fabrication.

Silicide film nucleation

Systems, apparatus, and methods are disclosed for foreline diagnostics and control. A foreline coupled to a chamber exhaust is instrumented with one or more sensors, in some embodiments placed between the chamber exhaust and an abatement system. The one or more sensors are positioned to measure pressure in the foreline as an indicator of conductance. The sensors are coupled to a trained machine learning model configured to provide a signal when the foreline needs a cleaning cycle or when preventive maintenance should be performed. In some embodiments, the trained machine learning predicts when cleaning or preventive maintenance will be needed.

Method and system for foreline deposition diagnostics and control

Aspects generally relate to methods, systems, and apparatus for conducting a calibration operation for a plurality of mass flow controllers (MFCs) of a substrate processing system. In one aspect, a corrected flow curve is created for a range of target flow rates across a plurality of setpoints. In one implementation, a method of conducting a calibration operation for a plurality of mass flow controllers (MFCs) of a substrate processing system includes prioritizing the plurality of MFCs for the calibration operation. The prioritizing includes determining an operation time for each MFC of the plurality of MFCs, and ranking the plurality of MFCs in a rank list according to the operation time for each MFC. The method includes conducting the calibration operation for the plurality of MFCs according to the rank list and during an idle time for the substrate processing system.

Methods, systems, and apparatus for conducting a calibration operation for a plurality of mass flow controllers (MFCs) of a substrate processing system

Embodiments generally relate to methods for depositing silicon-phosphorous materials, and more specifically, relate to using silicon-phosphorous compounds in vapor deposition processes (e.g., epitaxy, CVD, or ALD) to deposit silicon-phosphorous materials. In one or more embodiments, a method for forming a silicon-phosphorous material on a substrate is provided and includes exposing the substrate to a deposition gas containing one or more silicon-phosphorous compounds during a deposition process and depositing a film containing the silicon-phosphorous material on the substrate. The silicon-phosphorous compound has the chemical formula [(RHSi)&#x2014;(RHSi)]PHR', where each instance of R and each instance of R&#x2032; are independently an alkyl or a halogen, n is 0, 1, or 2; v is 0, 1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2; z is 0, 1, or 2, and where x+y+z=3.

Methods of processing a semiconductor substrate and apparatus to process semiconductor substrates are described. The methods and apparatus described enable the repetitive cyclic low temperature application of a chemistry and high temperature treatment step to a substrate.

Method and apparatus for semiconductor processing

Generally, examples described herein relate to methods and processing chambers and systems for forming a stacked pixel structure using epitaxial growth processes and device structures formed thereby. In an example, a first sensor layer is epitaxially grown on a crystalline surface on a substrate. A first isolation structure is epitaxially grown on the first sensor layer. A second sensor layer is epitaxially grown on the first isolation structure. A second isolation structure is epitaxially grown on the second sensor layer. A third sensor layer is epitaxially grown on the second isolation structure.

Stacked pixel structure formed using epitaxy

Growing community of inventors

Tracy, CA, United States of America

Errol Antonio C Sanchez