Infineon Technologies Ag

Nxp Usa, Inc.

Nxp B.v.

Ernst Seler

Maciej Wojnowski

Walter Hartner

Josef Boeck

Markus Josef Lang

Ulrich Moeller

Shamsuddin Ahmed

Ralf Reuter

Bernhard Rieder

Saverio Trotta

Gunther Kraut

Hao Li

Ziqiang Tong

Jagjit Singh Bal

Gustavo Adolfo Guarin Aristizabal

Arnaud Sion

Andreas Stelzer

Reinhard Feger

Tuncay Erdoel

Josef Kulmer

Markus Treml

Juergen Minichshofer

Patrick Hoelzl

Mehran Pour Mousavi

Thomas Lampersberger

Jorn Isaksen

Oleksiy Klymenko

According to a first example implementation, the method comprises providing a local oscillator signal in a first radar chip based on a local oscillator signal generated in a further radar chip; supplying the local oscillator signal to a transmission channel of the first radar chip which, based on the local oscillator signal, generates an HF output signal; changing the temperature and/or supply voltage of the first radar chip; measuring phase values based on the local oscillator signal supplied to the transmission channel and of the corresponding HF output signal for different temperature values and/or for different supply voltage values of the first radar chip; and ascertaining calibration data based on the measured phase values for a phase calibration to compensate for changes in the phase of the HF output signal resulting from a change in the temperature and/or in the supply voltage.

Ascertainment of calibration data to take temperature and voltage dependency of the HF radar signal phases in a radar system into consideration

A semiconductor device comprises a substrate having a first surface and a second surface opposite the first surface, at least one connection element arranged on the first surface of the substrate to electrically and mechanically connect the substrate to a printed circuit board, and a radar semiconductor chip arranged on the first surface of the substrate.

Semiconductor devices comprising a radar semiconductor chip and associated production methods

A radio-frequency device comprises a semiconductor device, comprising a radio-frequency chip, and a first connection element, which is configured to mechanically and electrically connect the semiconductor device to a circuit board. The radio-frequency device furthermore comprises a waveguide component arranged over the semiconductor device, comprising a waveguide embodied in the waveguide component, and a second connection element, which mechanically connects the waveguide component to the semiconductor device. At least one from the first connection element or the second connection element is embodied in an elastic fashion.

Radio-frequency device comprising semiconductor device and waveguide component

A chip package includes a chip configured to generate and/or receive a signal; a laminate substrate including a substrate integrated waveguide (SIW) for carrying the signal, the substrate integrated waveguide including a chip-to-SIW transition structure configured to couple the signal between the SIW and the chip and a SIW-to-waveguide transition structure configured to couple the signal out of the SIW or into the SIW, wherein the SIW-to-waveguide transition structure includes a waveguide aperture; and a plurality of electrical interfaces arranged about a periphery of the waveguide aperture, the plurality of electrical interfaces configured to receive the signal from the SIW-to-waveguide transition structure and output the signal from the chip package or to couple the signal to the SIW-to-waveguide transition structure and into the chip package.

Chip package with substrate integrated waveguide and waveguide interface

The present disclosure relates to a radar transmitting device, comprising a CMOS transceiver chip configured to provide at least one local oscillator signal at an output of the CMOS transceiver chip, and at least one BiCMOS transmitter chip coupled to the CMOS transceiver chip. The BiCMOS transmitter chip has an input for the local oscillator signal, at least one amplifier coupled to the input, a plurality of outputs for outputting a radar transmission signal on the basis of the local oscillator signal, and a plurality of transmission paths between the input and the plurality of outputs. Each of the transmission paths has a controllable analog phase shifter for controllable beam scanning during emission of the radar transmission signal. Additionally or alternatively, individual transmission paths of the BiCMOS transmitter chip can be selectively activated or deactivated using control signals.

Device and method for transmitting a radar signal

A radio-frequency device comprises a semiconductor package, which comprises a radio-frequency chip and a radio-frequency antenna. The semiconductor package is designed to be mechanically and electrically connected to a circuit board via at least one connecting element of the semiconductor package, with one surface of the semiconductor package facing the circuit board. The radio-frequency device also comprises a waveguide structure oriented in a direction parallel to the surface of the semiconductor package, the radio-frequency antenna being designed for at least one of the following: to emit radiation into the waveguide structure in the direction parallel to the surface of the semiconductor package, or to receive signals via the waveguide structure in the direction parallel to the surface of the semiconductor package.

Radio-frequency device with radio-frequency chip and waveguide structure

A radar sensor for use in a vehicle is described. The radar sensor comprising: at least one transmitter and at least once receiver to transmit and receive radar signals of the radar sensor; an acceleration sensor to measure the acceleration of said radar sensor or the chassis of said vehicle; a processor coupled to said acceleration sensor to calculate a tilt in a radar signal projected from said vehicle using said measured acceleration; a memory for storing said calculated radar tilt.

Vehicle radar sensor and method of operation

An automotive radar system comprises: a master module, a first radar module, a second radar module, and an optical waveguide arrangement operably coupling the master module to the first and second radar modules. The master module comprises an electro-optical interface device having an electrical domain side and an optical domain side. The optical domain side is operably coupled to the optical waveguide arrangement. The master module comprises a digital clock signal generator operably coupled to the electrical domain side of the electro-optical interface device.

Automotive radar system and method of synchronising an automotive radar system

A radar module () comprises a low temperature co-fired ceramic, LTCC, substrate (), with a radar chip () attached to a first surface () of the LTCC substrate () and a transmitting antenna () for transmitting the radar signal attached to a second surface () of the LTCC substrate (). The radar chip () is configured to generate a radar signal for transmission. The transmitting antenna () is configured to communicate with the radar chip () through the LTCC substrate (). The radar module () further comprises a beam steering element () configured to introduce a phase delay to the radar signal in order to adjust a first component of a direction of transmission of the radar signal.

Radar module

A transmission line coupling arrangement comprising:

Transmission line coupling system

A device is disclosed. The device includes a baseboard including a first set of metallic contact pads, a semiconductor integrated chip (IC) package including a second set of metallic contact pads and metallic interconnects to connect the first set of metallic contacts pads and the second set of metallic contact pads through metallic interconnects. The second set of metallic contact pads includes a first group of contact pads and a second group of contact pads. The first group of contact pads are designed to carry a high frequency signal. The baseboard includes a plurality of holes that at least partially segregates a first group of metallic interconnects that connects the first group of contact pads to the baseboard and a second group of metallic interconnects that connects the second group of contact pads to the baseboard.

Underfill stop using via bars in semiconductor packages

A method of manufacturing a semiconductor device package includes placing a semiconductor chip on a carrier, covering the semiconductor chip with an encapsulation material to form an encapsulation body, providing a microwave component having at least one electrically conducting wall structure integrated in the encapsulation body, and forming an electrical interconnect configured to electrically couple the semiconductor chip and the microwave component.

Method of manufacturing a semiconductor package having a semiconductor chip and a microwave component

A method of manufacturing an array of semiconductor device packages includes placing a plurality of semiconductor chips on a temporary carrier, covering the plurality of semiconductor chips with an encapsulation material to form an encapsulation body, providing a plurality of microwave components each including at least one electrically conducting wall structure integrated in the encapsulation body, forming a plurality of electrical interconnects each configured to electrically couple a semiconductor chip and a microwave component, and separating the encapsulation body into single semiconductor device packages each including a semiconductor chip, a microwave component and an electrical interconnect.

Method of manufacturing a semiconductor package having an integrated microwave component

A microwave device includes a semiconductor package comprising a microwave semiconductor chip and a waveguide part associated with the semiconductor package. The waveguide part is configured to transfer a microwave waveguide signal. It includes one or more pieces. The microwave device further includes a transformer element configured to transform a microwave signal from the microwave semiconductor chip into the microwave waveguide signal or to transform the microwave waveguide signal into a microwave signal for the microwave semiconductor chip.

Growing community of inventors

Munich, Germany

Ernst Seler