Siemens Aktiengesellschaft

Osram Gmbh

Osram Opto Semiconductors Gmbh

Siemens Microelectronics Limited

Osram Opto Semiconductor Gmbh Co. Ohg

Ernst Nirschl

Norbert Stath

Reinhard Sedlmeier

Georg Bogner

Walter Wegleiter

Werner Spaeth

Helmut Fischer

Gerald Neumann

Olaf Schoenfeld

Norbert Linder

Raimund Oberschmid

Karl-Heinz Schlereth

Gisela Lang

Siegmar Kugler

Olaf Sch&ouml;nfeld

Herbert Brunner

Volker Härle

Uwe Strauss

Dominik Eisert

Johannes Baur

Ulrich Zehnder

Johann Luft

Werner Spath

Werner Kuhlmann

Heinz Haas

Manfred Mundbrod-Vangerow

Frank Kühn

Rudolf Buchberger

Wolfgang Teich

Jacob Ulrich

Muk Wai Lui

The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the window layer available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.

High radiance LED chip and a method for producing same

This invention describes a radiation-emitting semiconductor component with the a multilayered structure () that contains a radiation-emitting active layer (), and a window () transparent to radiation that has a first principal face () and a second principal face () opposite the first principal face (), and whose first principal face () adjoins the multilayered structure (). At least one recess () is made in the window (), which preferably has the form of an indentation of the second principal face or as an edge excavation. At least one lateral surface of the window () or of the recess () is provided at least partially with a contact surface (). Alternatively or cumulatively, at least one contact surface of the component has a plurality of openings ().

Semiconductor component which emits radiation, and method for producing the same

An electroluminescent component (), in particular an LED chip, which has a high external efficiency in conjunction with a simple construction. The electroluminescent component () has a substrate (); a plurality of radiation decoupling elements arranged at a distance next to one another on the substrate () and having an active layer stack () with an emission zone (); and a contact element () on each radiation decoupling element (). The contact elements (), whose width (b') is dimensioned such that it is less than the width (b) of the radiation decoupling elements (), are arranged centrally on the radiation decoupling elements (), and the width (b) of the radiation decoupling elements (), for a given height (h), is chosen to be so small that a substantial proportion of the light () radiated laterally from the emission zone () can be decoupled directly through the side areas () of the radiation decoupling elements ().

Electroluminescent body

The invention concerns a light-emitting diode chip () comprising a radiation-emitting active region () and a window layer (). To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region () is smaller than the cross-sectional area of the window layer () available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.

High radiance led chip and a method for producing same

A light-emitting and/or light-receiving semiconductor body is produced with one or more semiconductor layers composed of GaAs P , where 0&lE;x<1. At least a portion of the surface of the semiconductor layer is first treated with an etching solution H SO :H O :H O in a first etching step and then with hydrofluoric acid in a second etching step. The etching results in a surface roughness on the treated portion of the surface of the semiconductor layer.

Process for producing a light-emitting and/or a light-receiving semiconductor body

A method for fabricating an infrared-emitting light-emitting diode in which a layer sequence is applied onto a semiconductor substrate, preferably composed of GaAs. The layer sequence has, proceeding from the semiconductor substrate, a first AlGaAs cover layer, a GaAs and/or AlGaAs containing active layer and a second AlGaAs cover layer. In which case, the first AlGaAs cover layer and the active layer are fabricated by a metal organic vapor phase epitaxy (MOVPE) method and the second AlGaAs cover layer is fabricated by a liquid phase epitaxy (LPE) method. Furthermore, an electrically conductive coupling-out layer having a thickness of at least about 10 &mgr;m is deposited on the second AlGaAs cover layer by the LPE method. The coupling-out layer is optically transparent in the infrared spectral region.

Method for fabricating an infrared-emitting light-emitting diode

A process for producing a semiconductor device includes the following sequential steps: producing a semiconductor body having an Al,Ga,As layer with an upper surface, where x&lE;0.40; applying a contact metallization made of a non-noble metallic material to the Al,Ga,As layer; precleaning a semiconductor surface to produce a hydrophilic semiconductor surface; roughening the upper surface of the Al,Ga,As layer by etching with an etching mixture of hydrogen peroxide &gE;30% and hydrofluoric acid &gE;40% (1000:6) for a period of from 1 to 2.5 minutes; and re-etching with a dilute mineral acid. According to another embodiment, 0&lE;x&lE;1 and the upper surface of the Al,Ga,As layer is roughened by etching with nitric acid 65% at temperatures of between 0&deg; C. and 30&deg; C.

Process for producing a semiconductor device with a roughened semiconductor surface

The invention relates to a method for producing a light-emitting component. A sequence of layers including at least one active layer is formed on the front face of a basic substrate consisting of semiconductor material. Subsequently, the basic substrate is at least partially removed and the sequence of layers is connected to an external substrate. The basic substrate is removed by wet-chemical etching in an etching agent that acts selectively on the material of the basic substrate. A first metallic contact layer is then applied to an end surface of the sequence of layers, and a second metallic contact layer is applied to an end surface of the external substrate. The sequence of layers is connected to the external substrate by connecting the first metallic contact layer to the second metallic contact layer using heat, by means of eutectic bonding.

Method for producing a light-emitting component

A method for producing at least one semiconductor body by metal organic vapor phase epitaxy (MOVPE). The semiconductor body is formed of a layer sequence with an active zone applied to a semiconductor wafer. By dry etching, the layer sequence is provided with at least one mesa trench whose depth is at least great enough that the active zone of the layer sequence is severed. Next, the composite including the semiconductor wafer and the layer sequence is severed in such a way that the at least one semiconductor body is created with at least one mesa edge.

Method for producing semiconductor bodies with an MOVPE layer sequence

A process for producing a semiconductor device includes the following sequential steps: producing a semiconductor body having an Al.sub.x Ga.sub.1-x As layer with an upper surface, where x.ltoreq.0.40; applying a contact metallization made of a non-noble metallic material to the Al.sub.x Ga.sub.1-x As layer; precleaning a semiconductor surface to produce a hydrophilic semiconductor surface; roughening the upper surface of the Al.sub.x Ga.sub.1-x As layer by etching with an etching mixture of hydrogen peroxide.gtoreq.30% and hydrofluoric acid.gtoreq.40% (1000:6) for a period of from 1 to 2.5 minutes; and re-etching with a dilute mineral acid. According to another embodiment, 0.ltoreq.x.ltoreq.1 and the upper surface of the Al.sub.x Ga.sub.1-x As layer is roughened by etching with nitric acid 65% at temperatures of between 0.degree. C. and 30.degree. C.

Process for producing a semiconductor device with a roughened

A radiation emitter component, in particular an infrared emitter component with a conventional light-emitting diode housing, includes two electrode connections, one of which has a well-shaped reflector. The housing has an optically transparent, electrically non-conducting encapsulation material. A semiconductor laser chip is fastened in a well-shaped reflector of the light-emitting diode housing. The semiconductor laser chip has a quantum well structure, in particular with a strained layer structure, for example MOVPE epitaxial layers with a layer sequence GaAlAs-InGaAs-GaAlAs. A diffusor material can be inserted into the optically transparent, electrically non-conducting material of the light-emitting diode housing. The diffusor material is constructed or inserted with regard to type and concentration in such a way that in connection with the semiconductor laser chip encapsulated in the light-emitting diode housing, a radiation characteristic curve or an increase of an effective emission surface is produced that is comparable to that of a conventional infrared light-emitting diode.

Radiation emitter component

Semiconductor chips are produced from a wafer. The semiconductor chips are separated from one another by etching the wafer all the way through, by a dry etching process, in defined separation zones between the semiconductor chips. Initially, first etching trenches for separating the p-n junctions are etched into the wafer. Then, second etching trenches are etched from the opposite side of the wafer until the individual semiconductor chips are completely separated.

Method for producing semiconductor chips

An optical coupling device and method for manufacturing the same is disclosed wherein a light-emitting semiconductor transmitter chip is secured to a light-detecting semiconductor receiver chip via a transparent insulating layer, a structured spacer layer and a transparent connecting layer. The resultant optocoupler has a high coupling factor and may be reliably manufactured into SMT compatible packages.

Optical coupling device and method for manufacturing the same

A light emitting diode includes a doped semiconductor substrate wafer with a layer sequence suitable for light emission in the green spectral range epitaxially applied thereon. A zinc-doped contact is applied to the p-conductive side of the wafer for efficient generation of pure green light emissions. An electrically conductive layer is provided between the zinc-doped contact and the p-conductive wafer side to suppress diffusion of oxygen into the p-conductive wafer side during diode manufacture.

Growing community of inventors

Wenzenbach, Germany

Ernst Nirschl