Axcelis Technologies, Inc.

Eaton Corporation

Ernst F Scherer

Kourosh Saadatmand

William F DiVergilio

Edward K McIntyre

David Richard Swenson

Kevin W Wenzel

William F Divergilio

Apparatus and methods are disclosed for measuring time delays between pulse streams or other input signals and for measuring ion beam energies in an ion implantation system. A variable delay apparatus is applied to one input signal, and the signals are correlated or compared in a correlator apparatus providing a minimum, maximum, or other ascertainable output signal value when a delay value of the variable delay is representative of the time delay between the first and second input signals. By adjusting or sweeping the variable delay until the ascertainable correlator apparatus output value is obtained, the actual time delay is determined as the dialed-in value of the variable delay that produces the ascertainable correlator output value. The variable delay measurement apparatus and methods may be employed in ion implantation system for measuring ion beam energies using time of flight probes, wherein the system and the time delay measurement apparatus may be calibrated to remove any residual delays of the system, such as delay offsets related to channel imbalance in the system and connecting devices. In addition, a unique error correction method is disclosed, which may be applied to the time delay measurement system measurement to minimize or mitigate errors introduced by electronic components of the system.

Methods and apparatus for precise measurement of time delay between two signals

An integrated RF amplifier and resonator is provided for use with an ion accelerator. The amplifier includes an output substantially directly coupled with a resonator coil. The amplifier output may be coupled capacitively or inductively. In addition, an apparatus is provided for accelerating ions in an ion implanter. The apparatus comprises an amplifier with an RF output, a tank circuit with a coil substantially directly coupled to the RF output of the amplifier, and an electrode connected to the coil for accelerating ions. Also provided is a method for coupling an RF amplifier with a resonator in an ion accelerator. The method comprises connecting the RF output of the amplifier to a coupler, and locating the coupler proximate the coil, thereby substantially directly coupling the RF output of the amplifier with the resonator coil.

Integrated resonator and amplifier system

A resonator circuit capable of resonating at a predetermined frequency is provided. The resonator circuit comprises a fixed position coil inductor (,) having a longitudinal axis (,) and a capacitor (,) electrically connected in parallel with each other to form a resonator (,), so that respective first and second ends of the inductor and the capacitor are electrically coupled together at a high-voltage end (,) and a low-voltage end (,) of the resonator (,). A radio frequency (RF) input coupling (,) is coupled directly to the inductor (,) at the low-voltage end (,) of the resonator. A high-voltage electrode (,) is coupled to the high-voltage end (,) of the resonator. A first resonator tuning mechanism is provided for varying the inductance of the inductor, comprising a plunger (,) movable within the coil of the inductor (,) along the longitudinal axis (,). A second resonator tuning mechanism is provided for varying the capacitance of the capacitor (,). The first tuning mechanism provides fine tuning of the resonator by means of varying the inductance of the inductor (,), and the second tuning mechanism provides coarse or initial tuning of the resonator by means of varying the capacitance of the capacitor (,).

Tunable and matchable resonator coil assembly for ion implanter linear accelerator

An ion implanter including a time of flight energy measurement apparatus for measuring and controlling the energy of an ion beam includes an ion source for generating the ion beam, an ion acceleration assembly for accelerating the beam resulting in the beam comprising a series of ion pulses having a predetermined frequency and beam forming and directing structure for directing the ion beam at workpieces supported in an implantation chamber of the implanter. The time of flight energy measurement apparatus includes spaced apart first and second sensors, timing circuitry and conversion circuitry. The time of flight energy measurement apparatus measures an average kinetic energy of an ion included in a selected ion pulse of the ion beam. The first sensor and a second sensor are disposed adjacent the ion beam and spaced a predetermined distance apart, the second sensor being downstream of the first sensor. The first sensor generates a signal when an ion pulse of the ion beam passes the first sensor and the second sensor generates a signal when an ion pulse of the ion beam passes the second sensor. The timing circuitry of the energy measurement apparatus is electrically coupled to the first and second sensors and determines an elapsed time, t, for the selected ion pulse to traverse the predetermined distance between the first and second sensors. The timing circuitry calculates an average number of ion pulses, N, in the ion beam between the first and second sensors based on the approximation of the ion beam energy and calculates an offset time, t(offset), for the selected ion pulse using the formula, t(offset)=N.times.T. The timing circuitry than determines the elapsed time, t. The conversion circuitry converts the elapsed time, t, for the selected ion pulse into a measure of the energy of the ion beam.

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Hamilton, MA, United States of America

Ernst F Scherer