Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Giesecke & Devrient Gmbh

Jenoptik Technologie Gmbh

Leica Lithographie Systeme Jena Gmbh

Giesecke+devrient Currency Technology Gmbh

Friedrich-schiller-universitat Jena

Ernst-Bernhard Kley

Manfred Heim

Michael Rahm

Marius Dichtl

Andreas Tuennermann

Hans Lochbihler

Uwe Zeitner

Thomas Pertsch

Jorg Petschulat

Kevin Fuechsel

Thomas Kampfe

Frank Schrempel

Uwe Detlef Zeitner

Thomas Kämpfe

Thomas KÄMPFE

Jörg Petschulat

Tina Clausnitzer

Thomas Kämpe

The present invention relates to the creation of a diffractive element that has a high degree of wavefront flatness. The diffractive element has a flat functional substrate with a first side, whereby a fine structure is arranged on or in this first side, and whereby the first side of this functional substrate is arranged on a flat carrier substrate, whereby the carrier substrate has a higher degree of rigidity than the functional substrate.

Diffractive element with a high degree of wavefront flatness

The present invention relates to a security element () for security papers, value documents and the like, having a feature region () that selectively influences incident electromagnetic radiation (). According to the present invention, it is provided that the feature region () includes metallic nanopatterns () in which volume or surface plasmons are excited and/or resonance effects are caused by the incident electromagnetic radiation ().

Security element

A semiconductor component that includes a photosensitive doped semiconductor layer, in which electrical charge carriers are released during absorption of electromagnetic radiation is disclosed. The photosensitive semiconductor layer has a structured interface and at least one layer which generates an electric field for separating the released charge carriers disposed downstream of the structured interface. The electric field extends over the structured interface. The photosensitive semiconductor component is distinguished by a high efficiency of the charge carrier separation, in particular, for generating an electric current.

Photosensitive semiconductor component

Process and arrangement for producing dose profiles for the fabrication

Stepped lens with Fresnel surface structure produced by lithography and

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Jena, Germany

Ernst-Bernhard Kley