Advanced Micro Devices Corporation

Ernesto A Gallardo

Ramkumar Subramanian

Suzette Keefe Pangrle

John G Pellerin

Jacques J Bertrand

Catherine B Labelle

Ramkumar Subramanion

One aspect of the present invention relates to a system and method for mitigating surface abnormalities on a semiconductor structure. The method involves exposing the layer to a first plasma treatment in order to mitigate surface interactions between the layer and a subsequently formed photoresist without substantially etching the layer, the first plasma comprising oxygen and nitrogen; forming a patterned photoresist over the treated layer, the patterned photoresist being formed using 193 nm or lower radiation; and etching the treated layer through openings of the patterned photoresist. The system and method also includes a monitor processor for determining whether the plasma treatment has been administered and for adjusting the plasma treatment components. The monitor processor transmits a pulse, receives a reflected pulse response and analyzes the response. An optional second plasma treatment comprising nitrogen and hydrogen may be administered after the first plasma treatment but before forming the photoresist.

Effect of substrate surface treatment on 193 NM resist processing

In a photo-lithographic step for providing contact points to lower layers of a semiconductor device, an anti-reflective coating (ARC) layer, such as FLARE 2.0&trade;, is used to provide a good contact points to an underlayer. After the contact points are made, the anti-reflective coating layer is removed, with the removal being performed in a same step in which a photo-resist is removed from the semiconductor device. In an alternative configuration, the ARC layer remains in the semiconductor device after the fabrication process is competed, thereby acting as an interlayer dielectric during operation of the semiconductor device.

Anti-reflective coating layer for semiconductor device

In a photo-lithographic step for providing contact points to lower layers of a semiconductor device, an anti-reflective coating (ARC) layer, such as FLARE 2.0.TM., is used to provide a good contact points to an underlayer. After the contact points are made, the anti-reflective coating layer is removed, with the removal being performed in a same step in which a photo-resist is removed from the semiconductor device. In an alternative configuration, the ARC layer remains in the semiconductor device after the fabrication process is competed, thereby acting as an interlayer dielectric during operation of the semiconductor device.

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San Jose, CA, United States of America

Ernesto A Gallardo