Honeywell G.m.b.h.

Ernest L Stelzer

Joseph L Schmit

M Walter Scott

Robert J Hager

Eric S Johnson

Maurice L Hitchell

Russell J Camp, Jr

Ohmic contacts to p-type mercury cadmium telluride are prepared by depositing a Column IB metal on a surface of the p-type mercury cadmium telluride, depositing a buffer material on the Column IB metal, and contacting the buffer material with a bonding material which is capable of alloying with the Column IB metal. The buffer material prevents alloying between the Column IB metal and the bonding material.

Ohmic contacts to p-type mercury cadmium telluride

The stoichiometry and free-carrier concentration of mercury cadmium telluride is adjusted by a heat treatment. Mercury cadmium telluride is heat treated in the presence of mercury and cadmium vapor.

Mercury cadmium telluride annealing procedure

The stoichiometry and free-carrier concentration of mercury cadmium telluride is adjusted by a heat treatment. Mercury cadmium telluride is slowly cooled from a temperature near the solidus temperature to room temperature in the presence of constituent vapor. The mercury cadmium telluride is maintained at the lowest temperature within the capsule during cooling.

Heat treatment of mercury cadmium telluride

A photoconductive detector array is formed in a single body of semiconductor material. The individual photoconductive detectors are formed by regions of first conductivity type. The bulk of the semiconductor body is of a second conductivity type, thereby electrically isolating the individual photoconductive detectors from one another. This detector array is easier to fabricate than prior art detector arrays, and has unique signal enhancement properties.

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Minnetonka, MN, United States of America

Ernest L Stelzer