Applied Materials, Inc.

Ernest L Cheung

William Nixon Taylor, Jr

Kuo-Shih Liu

Ashish V Shrotriya

Patty Hui-ing Tsai

Prasanth Kumar

John Ferguson

Michael G Friebe

A gas feedthrough in a semiconductor processing apparatus comprises a static-dissipative composite material. This material is characterized by good resistance to electromigration and is preferably made of a homogeneous material. This apparatus for preventing the transfer of energy to a gas flown through a gas line and comprises a gas feedthrough comprising a static-dissipative material, the feedthrough having a first end for abuttingly contacting an electrically energized member and a second end for contacting a grounded member, the feedthrough defining a void therein along its length to house a gas line.

Gas feedthrough with electrostatic discharge characteristic

A process for selectively etching a substrate 20 having a molybdenum silicide layer 25 with a resist material 26 on portions of the molybdenum silicide layer 25 is described. The substrate 26 is placed into an etch zone 54 and the process gas comprising SF.sub.6 and HBr is introduced into the etch zone 54. Preferably, the volumetric flow ratio of SF.sub.6 :HBr is from about 1:10 to about 1:1, and more preferably, an oxygen containing gas such as O.sub.2 is added to the process gas. A plasma is generated in the etch zone 54 to form an etch gas from the process gas that anisotropically etches the MoSi.sub.x layer 25 with good selectivity and reduced profile microloading.

Etching MoSi.sub.2 using SF.sub.6, HBr and O.sub.2

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Cupertino, CA, United States of America

Ernest L Cheung