Varian Semiconductor Equipment Associates, Inc.

Other

Eaton Corporation

Ernest E Allen

Costel Biloiu

Richard John Hertel

Frank Sinclair

Jay R Wallace

Kevin M Daniels

Ludovic Godet

Victor M Benveniste

Peter F Kurunczi

Vikram Singh

Shurong Liang

Vijayakumar C Venugopal

James Paul Buonodono

Alexander C Kontos

Jeffrey E Krampert

Tyler Burton Rockwell

Glen Gilchrist

Allan D Weed

Joseph P Dzengeleski

Jon Ballou

Daniel McGillicuddy

Alexander F Pless

Perry J Justesen

Gary J Rosen

The super nail punch is the only product of its kind that works with not one, but two cylinders, each carefully crafted to serve a specific purpose, and to ensure the nails are installed and secured correctly. This device is uniquely designed to be safe, simple, and highly functional. It includes interchangeable heads that fit the smallest to the largest nails to be employed in the pneumatic accessory, and guarantees the nails are adequately laid and sunk into any working surface. Moreover, the super nail punch is made with durable materials, a triangulated failsafe LED light, and a safety trigger to ensure long term sustainability, when used in private or commercial settings.

Pneumatic nail punch/driver

Embodiments herein include a transparent halo assembly for reducing an amount of sputtered material to minimize particle defects impacting a workpiece. In some embodiments, a halo assembly may include a first halo arranged around a semiconductor workpiece, and a mounting assembly coupling the first halo to a roplat. The first halo may include a first side opposite a second side, and a first end opposite a second end, wherein the first side is operable to receive an ion beam from an ion source. The first halo may further include a plurality of apertures extending between the first and second sides, wherein the plurality of apertures permit passage of a portion of the ion beam to pass therethrough, towards the mounting assembly. In some embodiments, the halo assembly may include a second halo positioned proximate the first halo, and a third halo disposed between the first halo and the mounting assembly.

Transparent halo assembly for reduced particle generation

Embodiments herein include a halo having varied conductance. In some embodiments, a halo surrounding a semiconductor workpiece may include a first side opposite a second side, and a first end opposite a second end, wherein the first side is operable to receive an ion beam from an ion source. The halo may further include a plurality of apertures extending between the first side and the second side, wherein the plurality of apertures permit passage of a portion of the ion beam to pass therethrough, and wherein the halo has a varied conductance between the first and second ends. In some embodiments, at least a group of apertures of the plurality of apertures vary in at least one of: pitch, and diameter. In some embodiments, a thickness of the halo between the first side and the second side varies along a height extending between the first end and the second end.

Transparent halo for reduced particle generation

A gas injection system for an ion beam device, the gas injection system including an extraction plate, an extraction aperture formed in the extraction plate for allowing passage of an ion beam, a first gas distributor removably fastened to the extraction plate on a first side of the extraction aperture, the first gas distributor having a gas orifice formed therein, a second gas distributor removably fastened to the extraction plate on a second side of the extraction aperture opposite the first side, the second gas distributor having a gas orifice formed therein, a first gas conduit extending through the extraction plate between the first gas distributor and a gas manifold mounted to the extraction plate, and a second gas conduit extending through the extraction plate between the second gas distributor the gas manifold, and a residue removal gas source connected to the gas manifold.

Gas injection system for ion beam device

A gas injection system, including an extraction plate having an extraction aperture for allowing passage of an ion beam through the extraction plate, the extraction plate further having a gas slot for expulsion of a residue removal gas from the extraction plate. The gas injection system may include a gas conduit extending through the extraction plate between the gas slot and a gas manifold, a gas source connected in fluid communication with the gas manifold, the gas source containing the residue removal gas. The gas manifold may include a valve adjustable between a first position, wherein the residue removal gas is allowed to flow into the extraction plate, and a second portion, wherein the residue removal gas can be vented from the extraction plate. The gas injection system may further include a manifold cover coupled to the gas manifold.

A processing apparatus may include a plasma chamber to house a plasma; and an extraction assembly disposed along a side of the plasma chamber. The extraction assembly may be configured to direct ions from the plasma to a substrate, wherein the ions generate etched species comprising material that is etched from the substrate; and wherein the extraction assembly comprises at least one component having a recess that faces the substrate and is configured to intercept and retain the etched species.

Apparatus and method for efficient materials use during substrate processing

A processing apparatus including a process chamber, a plasma source disposed within the process chamber, wherein the plasma source is movable in a first direction and is configured to emit an ion beam along a second direction that is orthogonal to the first direction. The apparatus may further include a platen disposed within the process chamber for supporting a substrate, and an ion beam current sensor that is disposed adjacent to the platen.

Processing apparatus and method of treating a substrate

A plasma processing apparatus and method are disclosed which create a uniform plasma within an enclosure. In one embodiment, a conductive or ferrite material is used to influence a section of the antenna, where a section is made up of portions of multiple coiled segments. In another embodiment, a ferrite material is used to influence a portion of the antenna. In another embodiment, plasma uniformity is improved by modifying the internal shape and volume of the enclosure.

Plasma attenuation for uniformity control

An improved bellows assembly (18) is provided for use in, for example, an ion implanter (10). The bellows assembly comprises a first mounting portion (56) located at one end of the bellows assembly for fixedly mounting the bellows assembly to a first vacuum chamber (16); a second mounting portion (52) located at an opposite end of the bellows assembly for slidably mounting the bellows assembly to a second vacuum chamber (15); and a steel bellows (54) located between the first and second mounting portions. The bellows extends generally along a longitudinal axis (64) and is expansible and contractible along this axis. The second mounting portion permits radial slidable movement of the bellows assembly with respect to the second chamber in a first plane substantially perpendicular to this axis. The second mounting portion comprises at least one sliding seal subassembly (80) for maintaining the vacuum, and a support ring (78) and a slide plate (82) located on opposite ends of the sliding seal subassembly. The slide plate and the sliding seal subassembly provide a slidable vacuum-tight mating surface therebetween.

Lateral stress relief mechanism for vacuum bellows

An optional insertable feature to the trim or modulating member for ball-type valves limits the magnitude of fluid flow turbulence within the flow stream of the valve. This attenuates noise and cavitation caused by flow through the valve. The insert mounts into the interior of the trim member and presents two intersecting apertured surfaces. The apertures or holes are specially shaped, sized, and spaced to maximize flow efficiency and minimize fluid turbulence as a result of flow through ball-like valves. The size and orientation of the surfaces are such that they restrict and partition fluid flow through the valve to varying degrees at varying valve openings. Virtually all fluid is partitioned by being directed through the apertured plates during approximately the first 50 percent opening of the valve to minimize noise and cavitation, while insuring that the flow characteristic is a monotonic function between valve capacity and valve opening.

Growing community of inventors

Rockport, MA, United States of America

Ernest E Allen