Gte Laboratories Incorporated

Ernest A Goldman

Paul E Poppert

Jeremiah P McCarthy

Moe S Wasserman

A body of silicon has sectors of N-type and P-type covered by silicon oxide gate layers with adjacent regions covered by a thicker silicon oxide field layer. Gate members of N-type polycrystalline silicon are placed on the gate layers to define an N-type channel region in the N-type sector and a P-type channel region is the P-type sector. P-type conductivity imparting material is introduced into the remaining regions of the N-type sector to convert them to P-type source/drain regions with an intervening N-type channel region, and N-type conductivity imparting material is introduced into the remaining regions of the P-type sector to convert them to N-type source/drain regions with an intervening P-type channel region. The exposed silicon oxide is grown to a thicker field layer and a protective oxide is formed on the polycrystalline gate members. The source/drain regions are exposed and adherent contact members of polycrystalline silicon of N and P-type are formed in ohmic contact with the source/drain regions of N and P-type, respectively. The surfaces of the polycrystalline contact members are metallized thereby shorting out rectifying junctions between N and P-type contact members.

Method of fabrication of monolithic integrated circuit structure

Method of fabricating a monolithic integrated circuit structure incorporating complementary metal-oxide-silicon field effect transistors (CMOS FET's) including providing a body of silicon produced by conventional techniques having a sector of N-type and a sector of P-type each covered by a thin silicon oxide layer and a thin silicon nitride layer. The regions of the body adjacent to each of the sectors are covered by a thicker silicon oxide field layer. Portions of the thin nitride and oxide layers are removed to expose spaced apart zones in each of the sectors. Adherent contact members of low resistivity polycrystalline silicon of N and P-type conductivity are formed in contact with the exposed surfaces of the zone in the P and N-type sectors, respectively. Where N and P-type contact members are contiguous a rectifying junction is produced. The surfaces of the polycrystalline contact members are metallized with a highly conductive material, thereby shorting out the rectifying junctions. P-type conductivity imparting material is implanted through a gate oxide layer into the N-type sector except the portion shielded by a first gate electrode and the contact members. N-type conductivity imparting material is implanted through a gate oxide layer into the P-type sector except the portions shielded by a second gate electrode and the contact members. The body is heated to drive the implanted conductivity type imparting materials further into the sectors and to diffuse conductivity type imparting material from the contact members into the adjacent zones.

Method of fabricating a monolithic integrated circuit structure

Optimized switching and retention characteristics of an MNOS memory device are obtained by using as a gate electrode material either metals or semi-metals having a high work function, in conjunction with a gate dielectric layer having a low density of trapping states throughout its volume. The preferred gate electrode materials are either titanium or p.sup.+ -doped polycrystalline silicon.

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Stow, MA, United States of America

Ernest A Goldman