Gte Products Corporation

Other

Gte Sylvania Incorporated

Ernest A Davey

Lawrence L Hope

Henry T Hidler

Edward D Parent

Martin P Schrank

Norman A Mathieu

Charles E Deschenes

Robert Shimer

An improved hermetic seal means for use in an electroluminescent display device for joining the protective cover sheet (glass) over the base substrate. The base substrate has typically deposited thereon multiple thin film layers. The hermetic seal comprises an electrically insulative thin film layer disposed over the conductive thin film leads associated with the multiple thin film layers, and metallic solder means over the insulative thin film layer to provide a bond between the cover sheet and base substrate.

Electroluminescent display device

A process for bonding one or more target parts, such as yttrium oxide target parts, to a copper backing plate to provide improved mechanical support and improved heat transfer. The process is one in which a noble metal, preferably platinum, is applied to the target to provide an oxide free layer to which indium/lead solder joins. The solder step is performed so that contamination by flux or by formation of an oxide is prevented.

Target bonding process

A sputtering cathode apparatus for the deposition of thin films which are produced at a relatively high deposition rate. A relatively large planar magnetron sputtering system or apparatus is provided with a preferred single convoluted electron path so as to obtain high geometric efficiency. The target is larger than the substrate and the substrate motion is confined to an area within the defined target area. The cathode system requires a vacuum system of relatively small dimension due to the increase in target size in comparison with substrate size along with the provision for multiple plasma legs separated by non-emissive regions therebetween. This construction enables minimized substrate motion relative to the target.

Sputtering cathode apparatus

The deposition of thin films is carried out by a co-sputtering cathode technique particularly suited for deposition of doped thin films on large area substrates. A relatively large planar magnetron sputtering apparatus having a rectangular (picture frame shaped) plasma region is provided to obtain efficient sputtering of the host material. A vacant center area defined by the plasma region is provided for diode sputtering of the dopant. In RF sputtering, co-excitation of the power source is desired to prevent RF mode beating.

Thin film deposition by sputtering

A process and associated system for forming a thin film phosphor layer which is comprised of a host substance doped with an activator and which layer is formed by a sputtering process. Heat is applied to the substrate to elevate the temperature thereof while maintaining a vacuum in the sputtering chamber. The substrate is supported for movement in the chamber. Sputtering is accomplished within the chamber by causing a sputtering gas to flow therein while concurrently exciting host and activator targets to form a plasma in the chamber and maintaining this sputtering for a predetermined period of time.

Thin film phosphor sputtering process

In an evaporation source for the vacuum deposition of sublimating material, the evaporant surrounds, and is spaced from, an axially disposed coiled tungsten heater. The evaporated material passes out of the source in an upward direction to deposit on a substrate located above the source.

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Peabody, MA, United States of America

Ernest A Davey