Micron Technology Incorporated

Erminio Di Martino

Luca Porzio

Graziano Mirichigni

Stefano Zanardi

Domenico Monteleone

Giacomo Bernardi

Claudio Giaccio

Ferdinando Pascale

Andre Klindworth

Chee Weng Tan

Raffaele Mastrangelo

Ferdinando D'Alessandro

Cristiano Castellano

Andrea Castaldo

Sebastien Lemarie

Roberto Izzi

Marco Onorato

Jeffery Carlos Bell

Sebastien LeMarie

Methods, systems, and devices for hardware reset management for universal flash storage (UFS) are described. A UFS device may initiate a boot-up procedure that includes multiple phases. The UFS device may perform a first reset operation to reset one or more circuits based on receiving a first reset command during a first phase. The UFS device perform a second phase and may initiate a portion of a second reset operation to reset the one or more circuits during the second phase based on a likelihood that a second reset command is to be received. The UFS device may receive the second reset command during the second phase after initiating the portion of the second reset operation. The UFS device may initiate a second portion of the second reset operation based on receiving the second reset command and initiating the portion of the second reset operation.

Hardware reset management for universal flash storage

Devices and techniques are disclosed herein to extend a range of an effective delay of a delay circuit having a configurable delay limited to a first range of delay values with respect to a first edge of a clock signal. A selection circuit can selectively apply the configurable delay to a subsequent, second edge of the clock signal to extend the range of the effective delay of the delay circuit beyond the first range of delay values.

Host clock effective delay range extension

Apparatuses and methods for commands to perform wear leveling operations are described herein. An example apparatus may include a memory configured to receive a wear leveling command and to perform a wear leveling operation responsive to the wear leveling command. The memory may further be configured to recommend a wear leveling command be provided to the memory responsive to a global write count exceeding a threshold. The global write count may be indicative of a number of write operations performed by the memory since the memory performed a wear leveling operation.

Performing wear leveling operations in a memory based on block cycles and use of spare blocks

Apparatus and methods are disclosed, including test systems for memory devices. Example test systems and methods include power loss logic to determine when one or more test conditions have been met in a memory operation between a host device and a memory device under test. Example test systems and methods include a function to then instruct a power management device to trigger a power loss event.

Power loss test engine device and method

Devices and techniques are disclosed herein for determining, using a host device, a timing relationship between a data strobe signal, such as from an embedded MultiMediaCard (eMMC) device, and an internal clock signal. The host device can control a delay circuit using the determined timing relationship, such as to align received read data for sampling, or to determine or adjust a delay value of the delay circuit.

Data strobe calibration

Data strobe multiplexer

Devices and techniques are disclosed herein for applying an effective sampling delay at a host device to one of an input signal, such as from an embedded MultiMediaCard (eMMC) device, or a clock signal. The host device can apply a configurable delay to one of the input signal or the clock signal with respect to a first edge of the clock signal, sample the input signal using the clock signal according to the configurable delay, and selectively align the sampled input signal to a subsequent, second edge of the clock signal to extend the configurable delay of the host device.

Apparatuses and methods for providing data to a configurable storage area are described herein. An example apparatus may include an extended address register including a plurality of configuration bits indicative of an offset and a size, an array having a storage area, a size and offset of the storage area based, at least in part, on the plurality of configuration bits, and a buffer configured to store data, the data including data intended to be stored in the storage area. A memory control unit may be coupled to the buffer and configured to cause the buffer to store the data intended to be stored in the storage area in the storage area of the array responsive, at least in part, to a flush command.

Apparatuses and methods for providing data to a configurable storage area

Apparatuses and methods for performing write count threshold wear leveling operations

Apparatuses and methods for providing data to a configurable storage area are disclosed herein. An example apparatus may include an extended address register including a plurality of configuration bits indicative of an offset and a size, an array having a storage area, a size and offset of the storage area based, at least in part, on the plurality of configuration bits, and a buffer configured to store data, the data including data intended to be stored in the storage area. A memory control unit may be coupled to the buffer and configured to cause the buffer to store the data intended to be stored in the storage area in the storage area of the array responsive, at least in part, to a flush command.

Apparatuses and methods for providing data from a buffer are disclosed herein. An example apparatus may include an array, a buffer, and a memory control unit. The buffer may be coupled to the array and configured to store data. The memory control unit may be coupled to the array and the buffer. The memory control unit may be configured to cause the buffer to store the data responsive, at least in part, to a first write command and may further be configured to cause the buffer to store the data in the array responsive, at least in part, to a flush command. The memory control unit may further be configured to interrupt the flush command to prepare for a read command or a second write command and resume the flush command once the read command or the second write command is performed.

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Quarto, Italy

Erminio Di Martino