Seagate Technology Incorporated

Other

Erli Chen

Sining Mao

Lujun Chen

Douglas A Saunders

Zheng Gao

Dimitar Velikov Dimitrov

Jian Jim Wang

Greg E Blonder

Alexander Mikhailovich Shukh

Xuegong Deng

Juan Jose Fernandez-de-Castro

Ananth Naman

Paul Kolbo

Philip A Seekell

A radiation polarizer, controller, and a method of radiation polarization and beam control, are disclosed. The radiation polarizer includes a substrate, at least one anti-reflection coating layer communicatively coupled to the substrate, at least two nanostructures communicatively coupled to the at least one anti-reflection coating layer, and at least two groove layers, wherein each one of the at least two groove layers is interstitial to a respective one of the at least two nanostructures. The method may include the steps of communicatively coupling at least one anti-reflection coating layer to a substrate, communicatively coupling at least two nanostructures to at least one of the at least one anti-reflection coating layer, providing interstitially to a respective one of the at least two nanostructures at least two groove layers, coupling the at least two groove layers and the at least two nanostructures to provide a pass wavelength in the range of about 250 nm to less than about a microwave wavelength, and allowing for examining of radiation having a wavelength in a range of about 250 nm to less than about a microwave wavelength, and having an electric field orthogonal to the at least two groove layers, by allowing for a passing of the radiation through said coupling of the at least two groove layers and the at least two nanostructures.

Method and system for providing beam polarization

A read sensor for use in a magnetic read head includes a magnetoresistive stack having a plurality of layers, and first and second shield regions positioned adjacent to the magnetoresistive stack. Each of the shield regions includes a first soft magnetic layer for shunting flux from an adjacent track to the shield region instead of the magnetoresistive stack.

Magnetoresistive sensor with reduced side-reading effect

A spin valve sensor for use with a data storage system includes free and pinned ferromagnetic (FM) layers, a conducting layer therebetween, contact leads, free layer biasing elements, and an anti-ferromagnetic (AFM) layer. The pinned layer has opposing ends, which define a width of an active region of the spin valve sensor having a giant magnetoresistive effect in response to applied magnetic fields. The free layer is positioned below the pinned layer and has opposing ends that extend beyond the active region. The contact leads abut the pinned layer and overlay portions of the conducting layer. The free layer biasing elements abut the ends of the free layer and bias a magnetization of the free layer in a longitudinal direction.

Spin valve sensor

Side-reading of an abutted-junction magnetic transducer is measured by constructing at least one microtrack having a transition density. The transducer is moved relative to the microtrack to identify a plurality of positions of the transducer relative to the microtrack where the transducer provides a predetermined response. The side-reading distance of the transducer is identified from the plurality of positions. In one embodiment, a plurality of microtracks are constructed during different iterations, each having a different transition density, and the positions of the transducer are identified during each iteration relative to the respective microtrack. In another embodiment, the selected transition density has a fundamental frequency, and the position of the transducer is identified relative to the microtrack where the transducer provides the predetermined response at each of a plurality of harmonic frequencies of the fundamental frequency.

Process of measuring slide-reading of abutted-junction read heads

Growing community of inventors

Belle Mead, NJ, United States of America

Erli Chen